Light emitting device, method of preparing the same and device for fabricating the same

ABSTRACT

A light emitting device having a high definition, a high aperture ratio and a high reliability is provided. The present invention realizes a high definition and a high aperture ratio for a flat panel display of full colors using luminescent colors of red, green and blue without being dependent upon the film formation method and deposition precision of an organic compound layer by forming the laminated sections  21, 22  by means of intentionally and partially overlapping different organic compound layers of adjacent light emitting elements. Moreover, the protective film  32   a  containing hydrogen is formed and the drawback in the organic compound layer is terminated with hydrogen, thereby realizing the enhancement of the brightness and the reliability.

This application is a divisional of U.S. application Ser. No.10/349,750, filed on Jan. 22, 2003 now U.S. Pat. No. 7,098,069.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device, in particular,the present invention relates to a light emitting device having a lightemitting element formed on a substrate having an insulating surface andmethod of manufacturing thereof. Further, the present invention relatesto an organic light emitting module on which ICs and the like, includinga controller, are mounted to an organic light emitting panel. Note thatthe terms organic light emitting panel and organic light emitting moduleboth generically refer to light emitting devices in this specification.The present invention additionally relates to an apparatus formanufacturing the light emitting device.

In this specification, semiconductor devices correspond to generaldevices functioning by use of semiconductor characteristics. Therefore,a light emitting device, an electro-optical device, a semiconductorcircuit and an electronic device are all included in the category of thesemiconductor device.

2. Description of the Related Art

In recent years, techniques of forming TFTs (thin film transistors) onsubstrates have been progressing greatly, and developments in theirapplication to active matrix type display devices is advancing. Inparticular, TFTs that use polysilicon films have a higher electric fieldeffect mobility (also referred to as a mobility) than TFTs that useconventional amorphous silicon films, and therefore high speed operationis possible. Developments in performing control of pixels by formingdriver circuits made from TFTs that use polysilicon films on a substrateon which the pixels are formed have therefore been flourishing.

It has been expected that various advantages can be obtained by usingactive matrix type display devices in which pixels and driver circuitsare mounted on the same substrate, such as reductions in manufacturingcost, miniaturization of the display device, increases in yield, andreductions in throughput.

Furthermore, research on active matrix type light emitting devices usingorganic light emitting elements as self light emitting elements(hereinafter referred to simply as light emitting devices) has becomemore active.

Switching elements composed of TFTs (hereinafter referred to asswitching elements) are formed for each pixel in active matrix typelight emitting devices, and driver elements for performing electriccurrent control by the switching TFTs (hereinafter referred to aselectric current control TFTs) are operated, thus making EL layers(specifically, light emitting layers) emit light. For example, a lightemitting device disclosed in Japan Patent Laid-Open No. 10-189252 A isknown.

Organic light emitting elements are self light emitting, and thereforehave high visibility. Backlights, necessary for liquid crystal displaydevices (LCDs), are not required for organic light emitting elements,which are optimal for making display devices thinner and have nolimitations in viewing angle. Light emitting devices using the organiclight emitting elements are consequently being focused upon assubstitutes for CRTs and LCDs.

Note that EL elements have a layer containing an organic compound inwhich luminescence develops by the addition of an electric field(electroluminescence) (hereinafter referred to as EL layer), an anode,and a cathode. There is light emission when returning to a base statefrom a singlet excitation state (fluorescence), and light emission whenreturning to a base state from a triplet excitation state(phosphorescence) in the organic compound layer, and it is possible toapply both types of light emission to light emitting devicesmanufactured by the manufacturing apparatus and film formation method ofthe present invention.

The EL elements have a structure in which an EL layer is sandwichedbetween a pair of electrodes, and the EL layer normally has a laminatestructure.

A laminate structure of “a hole transporting layer/a light emittinglayer/electron transporting layer” can be given as a typical example.This structure has extremely high light emitting efficiency, and atpresent almost all light emitting devices undergoing research anddevelopment employ this structure.

Further, a structure in which: a hole injecting layer, a holetransporting layer, a light emitting layer, and an electron transportinglayer are laminated in order on an anode; or a hole injecting layer, ahole transporting layer, alight emitting layer, an electron transportinglayer, and an electron injecting layer are laminated in order on ananode may also be used. Fluorescent pigments and the like may also bedoped into the light emitting layers. Further, all of the layers may beformed by using low molecular weight materials, and all of the layersmay be formed by using high molecular weight materials.

SUMMARY OF THE INVENTION

Concerning an organic compound material constituting an EL layer(strictly speaking, that is, light emitting layer) which can be referredto as a center of an EL element, a short chain based organic compoundmaterial and a polymer molecule based (polymer based) organic compoundmaterial have been investigated, respectively.

As a method of forming these organic compound materials into a film, anink jet method, a vapor deposition method, a spin coating method and thelike are known.

However, in the case where a flat panel display of full colors using theemitting colors of red, green and blue is to be prepared, since thedeposition precision is not so high, it is designed so that the intervalbetween different pixels is widened, or an insulator which is called asa “bank” is provided between the pixels.

Moreover, as a flat panel display of full colors using red, green andblue, the requirements for a high definition, a high aperture efficiencyand a high reliability has been heightened. Such requirements have beenbig problems in seeking for the high definition (increase of the numberof pixels) of a light emitting device and miniaturization of therespective display pixel pitch accompanied with downsizing of thedevice. Moreover, at the same time, the requirements for the enhancementof the productivity and the lowering of the cost have been alsoheightened.

In addition, the present invention is also directed to enhance thereliability and brightness of a light emitting element.

The present invention realizes the high definition and high apertureefficiency of a product for a flat panel display of full colors usingluminescent colors of red, green and blue without being dependent upon amethod of forming an organic compound layer and the deposition precisionby intentionally overlapping one portion of different organic compoundlayers of the adjacent light emitting elements.

However, an inorganic insulating film is provided between the portionwhere one portion of different organic compound layers are overlappedand a pixel electrode, this inorganic insulating film covers both endsof the respective pixel electrodes and intervals between them. It shouldbe noted that even in the case where the other organic compound layerhas superimposed onto the organic compound layer being in contact withthe pixel electrode, since the emission brightness is lowered to about1/1000 and the flowing current also becomes about 1/1000, no problemoccurs. In the configuration 1 of the present invention disclosed in thepresent specification, a light emitting device is characterized in that,

the foregoing light emitting device has a plurality of light emittingelements having a cathode, an organic compound layer being in contactwith the relevant cathode and an anode being contact with the relevantorganic compound layer, in which,

a first light emitting element having a first organic compound layer,

a second light emitting element having a second organic compound layer,and

a third light emitting element having a third organic compound layerhave been arranged, and which, has an insulator for covering the ends ofthe foregoing anode, and in which the foregoing first organic compoundlayer, the foregoing second organic compound layer or the foregoingthird organic compound layer has been provided on the relevant insulatorand the foregoing anode.

In the configuration 2 of the present invention disclosed in the presentspecification, a light emitting device is characterized in that,

the foregoing emitting device has a plurality of light emitting elementshaving a cathode, an organic compound layer being in contact with therelevant cathode and an anode being in contact with the relevant organiccompound layer, in which,

a first light emitting element having a first organic compound layer,

a second light emitting element having a second organic compound layer,and

a third light emitting element having a third organic compound layerhave been arranged, and which, has an insulator for covering the ends ofthe foregoing cathode, and in which the foregoing first organic compoundlayer, the foregoing second organic compound layer or the foregoingthird organic compound layer has been provided on the relevant insulatorand the foregoing cathode.

Moreover, concerning an active matrix type light emitting device, twotypes of structures are contemplated from the viewpoint of radiationdirection of the light. One is a structure in which the light emittedfrom an EL element transmits through the opposing substrate andirradiated to the observer's eyes. In this case, the observer canrecognize an image from the opposing substrate side. The other is astructure in which the light emitted from an EL element transmitsthrough the element substrate and irradiated to the observer's eyes. Inthis case, the observer can recognize an image from the elementsubstrate side.

Moreover, in the above-described respective configurations, theforegoing insulator is characterized in that it is a barrier (alsoreferred to as bank) composed of an organic resin covered by aninorganic insulating film or an inorganic insulating film. It should benoted that the foregoing inorganic insulating film is characterized inthat it is an insulating film whose film thickness is in the range from10 to 100 nm and whose major component is silicon nitride. Moreover, asan insulator for covering ends of a cathode or an anode, a filmcontaining hydrogen, representatively, a thin film whose major componentis carbon or a silicon nitride film may be used.

In addition, it is extremely useful that as an anode, a transparentconductive film (representatively, ITO, ZnO) is used, and further, onwhich, a protective film composed of an inorganic insulating film isformed.

Furthermore, it is preferable that prior to the formation of theprotective film composed of an inorganic insulating film, a filmcontaining hydrogen (representatively, thin film (DLC film) whose majorcomponent is carbon, silicon nitride film, silicon oxynitride film,silicon oxide film or laminated film thereof) is formed by a plasma CVDmethod or a sputtering method. Moreover, it is preferable that a siliconnitride film as a protective film is formed by covering the foregoingfilm containing hydrogen. Moreover, in the above-described respectiveconfigurations, the foregoing first light emitting element ischaracterized in that it emits any one of color out of red color, greencolor or blue color. Moreover, the foregoing first light emittingelement, the foregoing second light emitting element and the foregoingthird light emitting element are characterized in that these emit colorsdifferent from each other.

Moreover, in the above-described respective configurations, it ispreferable that in a sealing, the whole of a light emitting element issealed using a sealing substrate, for example, a glass substrate or aplastic substrate.

Moreover, in a light emitting device, there has been a problem such thatan incident light from the exterior (light from the exterior of thelight emitting device) is reflected by the backside of a cathode(surface of the side being in contact with the light emitting layer) ina pixel not emitting the light, the backside of the cathode acts as amirror, and the exterior landscape is projected on the observationsurface (surface facing to the observer side). Moreover, in order toavoid this problem, it has been devised such that a circularly polarizedlight film was pasted on the observation surface of the light emittingdevice, but there has been a problem that since the cost of thecircularly polarized light film is very high, it causes the increase ofthe manufacturing cost.

An object of the present invention is to prevent a light emitting devicefrom being mirror plate without using a circularly polarized film, bymeans of this, the present invention is directed to reduce themanufacturing cost of a light emitting device, and also to provide acheap light emitting device. Hence, in the present invention, it ischaracterized in that instead of a circularly polarized film, a cheapcolor filter is used. In the above-described configuration, in order toenhance the color purity, it is preferable that the foregoing lightemitting device is equipped with a color filter corresponding to therespective pixel. Moreover, it may be made so that the portion of theblack color of the color filter (black color organic resin) isoverlapped with the interval between the respective light emittingregions. Furthermore, it may be also configured so that the portion ofthe black color of the color filter is partially overlapped with thedifferent organic compound layer.

However, in the outgoing direction of emission, specifically, betweenthe foregoing light emitting element and the observer, a color filter isprovided. For example, in the case where it is not transmitted throughthe substrate on which the light emitting element is provided, a colorfilter may be pasted on the sealing substrate. Or, in the case where itis transmitted through the substrate on which the light emitting elementis provided, the color filter may be pasted on the substrate on whichthe light emitting element is provided. By thus doing it, the circularlypolarized film becomes unnecessary.

Moreover, the biggest problem among the practical applications of an ELelement is the fact that the lifespan of an element is insufficient.Moreover, the deterioration of an element appears in a form wherenon-light emitting region (dark spot) is widened accompanying withemitting the light for long time, and the deterioration of an EL layerbecomes a big problem as a causing factor of it.

In order to solve the problem, the present invention is characterized inthat plasma is generated under the atmosphere containing hydrogen andthe drawbacks in the organic compound layer are terminated withhydrogen. The other configuration 3 of the present invention ischaracterized in that it has,

a light emitting element on the substrate having an insulation surface,the relevant light emitting element has an anode, a cathode and anorganic compound layer sandwiched between the foregoing anode and theforegoing cathode, and

the foregoing light emitting element is covered with a film containinghydrogen.

The drawback in an organic compound layer can be terminated withhydrogen by diffusing hydrogen from the above-described film containinghydrogen by means of performing the heating treatment in a temperaturerange where the organic compound layer is durable or by means ofutilizing the heat generation generated at the time when the lightemitting element emits the light. Once the drawback in the organiccompound layer, representatively, a dangling bond is terminated withhydrogen, the reliability for a light emitting device is enhanced.Moreover, when the above-described film containing hydrogen is formed ina film, the drawback in the organic compound layer may be terminatedwith hydrogen by diffusing or implanting hydrogen which has been madeplasmatic. By thus performing, unstable bonds existed in the organiccompound layer or generated by any of the causing factors (heatgeneration generated at the time when it emits, irradiation of light,change of temperatures, and the like) can be reduced. Therefore, theenhancement of the reliability and brightness as a light emittingelement can be realized. Moreover, the protective layer for covering andforming the film containing hydrogen blocks hydrogen diffusing to theprotective layer side and efficiently diffusing hydrogen into an organiccompound layer and plays a role for terminating the drawback in theorganic compound layer with hydrogen. Moreover, in order to makehydrogen transmit through a cathode or an anode formed on the organiccompound layer and diffuse hydrogen, it is preferable that the thicknessof the cathode or anode is made thinner. However, the cathode or anodeformed on the organic compound layer is protected not to damage theorganic compound layer at the time when the film containing hydrogen isformed. Moreover, the above-described film containing hydrogen can befunctioned as a protective film of a light emitting element.Furthermore, the above-described film containing hydrogen can befunctioned as a buffer layer, in the case where a silicon nitride filmis formed in a state where it is in contact with a film composed of atransparent conductive film by a sputtering method, it is feared thatimpurities (In, Sn, Zn and the like) contained in the transparentconductive film is contaminated into the silicon nitride film. However,the impurities contamination into the silicon nitride film can beprevented by forming the above-described film containing hydrogen whichis to be a buffer layer between two films. The contamination of theimpurities (In, Sn and the like) from the transparent conductive film isprevented and an excellent protective film without any impurities can beformed.

Moreover, a preparation method for realizing the above-describedconfigurations is also one of the present invention, the constitutionrelating to the preparation method of the present invention is,

a method of preparing a light emitting device characterized in that aTFT is formed on an insulation surface, a cathode electrically connectedto the foregoing TFT is formed, an organic compound layer is formed onthe foregoing cathode, after an anode has been formed on the foregoingorganic compound layer, and a film containing hydrogen is formed on theforegoing anode. Moreover, the other constitution relating to apreparation method of the present invention is,

a method of preparing a light emitting device characterized in that aTFT is formed on an insulation surface, an anode electrically connectedto the foregoing TFT is formed, an organic compound layer is formed onthe foregoing anode, and after a cathode has been formed on theforegoing organic compound layer, a film containing hydrogen is formedon the foregoing cathode. Moreover, in the above-described respectiveconstitutions relating to a preparation method of the present invention,the foregoing film containing hydrogen is characterized in that it isformed in the temperature range where the foregoing organic compoundlayer is durable, for example, in the range from room temperature to100° C. or less by a plasma CVD method or a sputtering method, and theforegoing film containing hydrogen is characterized in that it is a thinfilm whose major component is carbon or it is a silicon nitride film.

Moreover, in the above-described respective constitutions relating to apreparation method of the present invention, a step of forming theforegoing organic compound layer is characterized in that it is carriedout by a vapor deposition method, a coating method, an ion platingmethod or an ink jet method.

Moreover, in the above-described constitutions relating to a preparationmethod of the present invention, the present invention is characterizedin that a protective film composed of an inorganic insulating film isformed on the foregoing film containing hydrogen.

Moreover, in the above-described constitutions relating to a preparationmethod of the present invention, the present invention is characterizedin that at the time when the foregoing film containing hydrogen isformed, the drawback in the foregoing organic compound layer isterminated with hydrogen.

Moreover, in order to prevent the deterioration by moisture or oxygen,at the time when a light emitting element is sealed with a sealing canor a sealing substrate, hydrogen gas may be filled in the space to besealed or hydrogen and inert gas (rare gas or nitrogen) may be filled.

Moreover, it has been made that in the above-described preparationmethod at the time when the film is formed, the drawbacks in theforegoing organic compound layer are terminated with hydrogen, but it isnot particularly limited to that. Even if the film is not formed, onlyhydrogen plasma treatment may be performed. The other constitutionrelating to a preparation method of the present invention ischaracterized in that it comprises,

in a method of preparing a light emitting device having a plurality oflight emitting elements having an anode, an organic compound layer whichis in contact with the relevant anode and superimposed on the anode, acathode which is in contact with the organic compound layer andsuperimposed on the organic compound layer,

a first step of forming an organic compound layer on the anode,

a second step of performing the treatment for terminating the drawbackwith hydrogen in the foregoing organic compound layer by generating aplasma under the atmosphere containing hydrogen after the formation ofthe foregoing organic compound layer, and

a third step of forming a cathode on the foregoing organic compoundlayer.

Moreover, hydrogen plasma treatment may be performed immediately afterthe organic compound layer has been formed, other constitution relatingto a preparation method of the present invention is characterized inthat it comprises,

in a method of preparing a light emitting device having a plurality oflight emitting elements having an anode, an organic compound layer whichis in contact with the relevant anode and superimposed on the anode, acathode which is in contact with the organic compound layer andsuperimposed on the organic compound layer,

a first step of forming an organic compound on the anode,

a second step of forming a cathode on the foregoing organic compoundlayer, and

a third step of performing the treatment for terminating the drawbacksin the foregoing organic compound layer with hydrogen by generating aplasma under the atmosphere containing hydrogen after the formation ofthe foregoing cathode.

Moreover, other constitution relating to a preparation method of thepresent invention is characterized in that it comprises,

in a method of preparing a light emitting device having a plurality oflight emitting elements having a cathode, an organic compound layerwhich is in contact with the relevant cathode and superimposed on thecathode, an anode which is in contact with the relevant organic compoundlayer and superimposed on the organic compound layer,

a first step of forming an organic compound layer on the cathode,

a second step of forming an anode on the foregoing organic compoundlayer, and

a third step of performing the treatment for terminating the drawbacksin the foregoing organic compound layer with hydrogen by generating aplasma under the atmosphere containing hydrogen after the formation ofthe foregoing anode.

Moreover, hydrogen plasma treatment may be performed immediately afterthe organic compound layer has been formed, other constitution relatingto a preparation method of the present invention is characterized inthat it comprises,

in a method of preparing a light emitting device having a plurality oflight emitting elements having a cathode, an organic compound layerwhich is in contact with the relevant cathode and superimposed on thecathode, an anode which is in contact with the relevant organic compoundlayer and superimposed on the organic compound layer,

a first step of forming an organic compound on the cathode,

a second step of performing the treatment for terminating the drawbacksin the foregoing organic compound layer with hydrogen by generating aplasma under the atmosphere containing hydrogen after the formation ofthe foregoing organic compound layer, and

a third step of forming an anode on the foregoing organic compoundlayer.

It should be noted that in the present specification, all of the layersprovided between a cathode and an anode is generally referred to as anEL layer. Therefore, the above-described hole injection layer, holetransport layer, light emitting layer, electron transport layer andelectron injection layer are all contained in the EL layer.

In the present invention, a thin film whose major component describedabove is carbon is characterized in that it is a DLC (Diamond LikeCarbon) film of 3-50 nm in the film thickness. The DLC film has a SP³bonding as a carbon-carbon bonding in a short range order, but in macrorange order, it has an amorphous structure. The composition of the DLCfilm is composed of 70-95 atom % of carbon and 5-30 atom % of hydrogen,is very hard and excellent in insulation. The DLC film thus formed ischaracterized in that gas transmittance such as water vapor, oxygen andthe like is low. Moreover, it is known that it has a hardness of 15-25GPa by the measurement of micro-hardness meter.

The DLC film can be formed by plasma CVD method (representatively, RFplasma CVD method, microwave CVD method, electron cyclotron resonance(ECR) CVD method and the like), a sputtering method and the like. TheDLC film can be formed with excellent adhesion by any film formationmethod. The DLC film is formed by setting a cathode on the substrate.Or, a film being dense and hard can be formed by applying a negativebias and by utilizing an ion bombardment to some extent.

As for a reactant gas used for forming a film, hydrogen gas andhydrocarbon based gas (for example, CH₄, C₂H₂, C₆H₆ and the like) areused, ionized by glow discharge, an ion is accelerated and bombardedagainst the cathode which has been negatively self-biased, therebyforming a film. By thus performing, a DLC film being dense and smoothcan be obtained.

Moreover, this DLC film is characterized in that it is an insulationfilm transparent or semi-transparent with respect to the visible light.

Moreover, in the present specification, “being transparent with respectto the visible light” means that the transmittance of the visible lightis in the range from 80 to 100%, and “being semi-transparent withrespect to the visible light” means that the transmittance of thevisible light is in the range from 50 to 80%.

Moreover, the present invention provides a fabrication unit capable offabricating a light emitting device having a high reliability.

Other constitution of the present invention is a constitution relatingto a fabrication unit, characterized in that the fabrication unitcomprises,

loading chamber, a first carrier chamber connected to the relevantchamber and the foregoing treatment chamber connected to the relevantfirst carrier chamber,

a second carrier chamber connected to the foregoing first carrierchamber, and a film forming chamber of a plurality of organic compoundlayers connected to the relevant second carrier chamber,

a third carrier chamber connected to the foregoing second carrierchamber, and a film forming chamber of a metal layer, a film formingchamber of a transparent conductive film connected to the relevant thirdcarrier chamber, a treatment chamber equipped with means for generatinga plasma under the atmosphere containing hydrogen, and a film formingchamber of a protective film, and

a fourth carrier chamber connected to the foregoing third carrierchamber, and a dispenser chamber, a sealing substrate loading chamber,and a sealing chamber connected to the relevant fourth carrier chamber.

The constitution relating to the above-described fabrication unit ischaracterized in that the foregoing pretreatment chamber has vacuumexhaust means, heating means, and plasma generation means. Moreover, inthe above-described fabrication unit, the fabrication unit ischaracterized in that a device for forming an organic compound layercomposed of a polymer molecular material is connected to the foregoingfirst carrier chamber, and the device for forming an organic compoundlayer composed of the foregoing polymer molecular material is a devicein which the film formation is performed by a spin coat method, a spraymethod, an ion plating method, or an ink jet method.

Moreover, in the constitution relating to the above-described device, atreatment chamber equipped with means for generating a plasma under theatmosphere containing hydrogen is characterized in that it is a filmformation unit of a silicon nitride film or a film whose major componentis carbon.

Moreover, in the constitution relating to the above-describedfabrication unit, a film forming chamber of a plurality of organiccompound layers connected to the foregoing second carrier chamber ischaracterized in that it has a vapor deposition source. Using afabrication unit indicating the above-described constitution, a lightemitting device in which an EL element is covered with a film containinghydrogen and a protective film can be prepared with good throughput.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A to 1C are diagrams showing sectional views (Embodiment 1);

FIG. 2 is a diagram showing the top view (Embodiment 1);

FIGS. 3A and 3B are diagrams showing a model diagram (Embodiment 2);

FIGS. 4A to 4C are diagrams showing a laminated structure of the presentinvention (Embodiment 2);

FIGS. 5A and 5B are diagrams showing sectional view (Embodiment 3);

FIG. 6 is a diagram showing one example of a fabrication unit(Embodiment 4);

FIG. 7 is a diagram showing one example of a fabrication unit(Embodiment 4);

FIGS. 8A to 8C are diagrams showing sectional views (Embodiment 1);

FIGS. 9A and 9B are diagrams showing sectional views (Embodiment 1);

FIGS. 10A to 10D are diagrams showing sectional views (Embodiment 1);

FIGS. 11A to 11C are diagrams showing sectional views (Embodiment 5);

FIG. 12 is a diagram showing a sectional view of an active matrixsubstrate (Example 1);

FIGS. 13A to 13F are diagrams showing examples of electronic devices;and

FIGS. 14A to 14C are diagrams showing examples of electronic devices.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Hereinafter, embodiment of the present invention will be described.

Embodiment 1

FIG. 2 is a top view of an EL module. On a substrate (referred to as TFTsubstrate) on which many TFTs are provided, a pixel section 40 where thedisplay is performed, drive circuits 41 a, 41 b for driving therespective pixels of the pixel section, a connection section 43connecting an electrode provided on the EL layer and the drawing wiring,and a terminal section 42 for pasting FPC for connecting with theexterior circuit are provided. Moreover, the EL element is sealed with asubstrate for sealing the EL element and a sealing member 33. Moreover,FIG. 1A is a sectional view taken on chain line A-A′ of FIG. 2.

The pixels are disposed in order in the direction of the chain lineA-A′, now, an example in which R, G and B in turn are disposed in the Xdirection is exemplified. In the present invention, as shown in FIG. 1A,a laminated layer section 21 in which an EL layer 17 for emitting redcolor and an EL layer 18 for emitting green color are partiallyoverlapped with each other is formed. Moreover, a laminated section 22,in which the EL layer 18 for emitting green color and the EL layer 19for emitting blue color are partially overlapped with each other, isformed.

In this way, since the present invention makes the configuration inwhich the EL layer may be partially overlapped, a high definition andhigh aperture efficiency can be realized as a flat panel display of fullcolors using emitting colors of red, green and blue without dependingupon a method of forming an organic compound layer (ink jet method,vapor deposition method, spin coating method and the like) and thedeposition precision.

Moreover, in FIG. 1A, the light emitting region (R) indicates a lightemitting region of red, the light emitting region (G) indicates a lightemitting region of green, the light emitting region B indicates a lightemitting region of blue, and a light emitting display device which hasbeen fully colored is realized by these light emitting regions of threecolors.

Moreover, in FIG. 1A, a TFT 1 is an element for controlling the currentflowing in the EL layer 17 which emits red color, the reference numerals4, 7 denote a source electrode or a drain electrode. Moreover, a TFT 2is an element for controlling the current flowing in the EL layer 18which emits green color, the reference numerals 5,8 denote a sourceelectrode or a drain electrode. A TFT 3 is an element for controllingthe current flowing in the EL layer which emits blue color, thereference numerals 6, 9 denote a source electrode or a drain electrode.The reference numerals 15, 16 denote interlayer insulation filmscomposed of an organic insulating material or an inorganic insulatingfilm material.

Moreover, the reference numerals 11-13 denote an anode (or a cathode) ofan organic light emitting element, the reference numeral 20 denotes acathode (or anode) of an organic light emitting element. Here, for thecathode 20, it is made an electrode composed of a laminated layer filmof a metal layer whose film thickness is 10 nm or less(representatively, alloy such as MgAg, MgIn, AlLi and the like) and atransparent conductive film (ITO (indium tin oxide alloy), indiumoxide-zinc oxide alloy (In₂O₃—ZnO), zinc oxide (ZnO) and the like), andthe lights from the respective light emitting elements are transmittedthrough it. It should be noted that although a thin metal layerfunctions as a cathode of a light emitting element, in the presentspecification, a laminated layer film of a thin metal layer and atransparent conductive film is referred to as a cathode.

Moreover, both ends of the reference numerals 11-13 and the portionbetween them are covered with an inorganic insulator 14. Moreover, anorganic compound layer is formed even on one portion on the inorganicinsulator 14. The film thickness of the inorganic insulator 14 is 1 μmor less, the film formed on the inorganic insulator 14 can be thinned aswell as the coverage of the film formed on the inorganic insulator 14can be made better. It should be noted that FIG. 1C is a sectional viewtaken on the chain line C-C′ shown in FIG. 2. Moreover, In FIG. 1C, itis shown that the electrodes indicated with dotted line are electricallyconnected to each other. Moreover, in the terminal section, theelectrode of terminal is formed with the same material with that of thecathode 20.

Moreover, a sealing substrate 30 is pasted with a sealing member 33 soas to maintain the interval of about 10 μm, and all of the lightemitting element is sealed. It should be noted that the sealing member33 is preferably framed narrowly so that it overlaps one portion of adrive circuit. It is preferable that immediately before the sealingsubstrate 30 is pasted with the sealing member 33, the degassing iscarried out by performing the annealing in vacuum. Moreover, it ispreferable that at the time when the sealing substrate 30 is pasted, itis performed under the atmosphere containing hydrogen and an inert gas(rare gas or nitrogen), hydrogen is made contained in the space sealedwith the protective film 32, the sealing member 33 and the sealingsubstrate 30. The drawback in the organic compound layer can beterminated with hydrogen by utilizing the heat generation generated atthe time when the light emitting element emits the light and bydiffusing hydrogen from the space containing the above-describedhydrogen. Terminating the drawback in the organic compound layer withhydrogen, the reliability for a light emitting device is enhanced.Furthermore, in order to enhance the color purity, the color filterscorresponding to the respective pixels are provided in the sealingsubstrate 30. Out of the color filters, the red colored layer 31 b isprovided opposing to the red color light emitting region (R), the greencolored layer 31 c is provided opposing to the green color lightemitting region (G) and the blue colored layer 31 d is provided opposingto the blue color light emitting region (B). Moreover, the region exceptfor the light emitting region is shielded with the black portion of thecolor filter, that is, shielded with a shielding section 31 a. It shouldbe noted that the light shielding section 31 a is composed of a metalfilm (chromium and the like) or an organic film containing a blackpigment.

In the present invention, a circularly polarized plate is not requiredsince the color filters are provided.

Moreover, FIG. 1B is a sectional view taken on chain line B-B′ shown inFIG. 2. Also in FIG. 1B, both ends of 11 a-11 c and their interval arecovered with the inorganic insulating matter 14. Here, an example inwhich the EL layer 17 for emitting red color is common is shown, but itis not limited to that. The EL layer may be formed per each pixel foremitting the same color. Moreover, in FIG. 1, the protective film 32 bfor enhancing the reliability of the light emitting device is formed.The protective film 32 b is an insulation film whose major component issilicon nitride or silicon oxynitride, obtained by a sputtering method.Moreover, in FIG. 1, in order to make the emitted light pass through theprotective film 32 b, it is preferable that the film thickness of theprotective film 32 b is made as thinner as possible. Furthermore, theprotective film 32 a containing hydrogen is formed before the protectivefilm 32 b is formed for the purpose of enhancing the reliability of alight emitting device. The drawbacks of the organic compound layers17-19 are terminated by forming the protective film 32 a containinghydrogen before the protective film 32 b is formed. The foregoing film32 a containing hydrogen may be made a thin film whose major componentis carbon or a silicon nitride film. As a method of forming the film 32a containing hydrogen, in the temperature range, for example, in therange from room temperature to 100° C. or less where the foregoingorganic compound layer is durable, it is formed by plasma CVD method orby a sputtering method. It should be noted that in FIG. 1, the film 32 acontaining hydrogen is considered as a layer located beneath theprotective film. Moreover, the above-described film 32 a containinghydrogen can be made as a buffer layer that relaxes the film stress ofthe protective film 32 b.

Moreover, the present invention is, needless to say, not limited to theconfiguration shown in FIG. 1C. The examples in which one portion of theconfiguration is different from the configuration of FIG. 1C are shownin FIGS. 10A to 10D. It should be noted that for the simplification, inFIGS. 10A to 10D, the same reference numerals are used for the sameportions with those in FIG. 1. FIG. 1C is an example in which anelectrode composed of the same material (transparent electrode) withthat of the cathode in the terminal section, while FIG. 10A is anexample in which FPC is contacted with the electrode (upper layer is Wfilm and the lower layer is TaN film) composed of the same material withthat of the gate electrode of TFT.

Moreover, FIG. 10B is an example in which the FPC is connected with theelectrode 10 composed of the same material with that of the pixelelectrode (anode). It should be noted that this electrode 10 is providedon the electrode (upper layer is W film and the lower layer is TaN film)whose material is the same with that of the gate electrode of TFT andcontacted with the electrode. Moreover, FIG. 10C is an example in whichthe FPC is contacted with an electrode composed of the same material(transparent electrode) with the cathode 20 formed on the electrode 10composed of the same material with the pixel electrode (anode) providedon the drawing wiring of the TFT (wiring that TiN film, Al film, TiNfilm in turn are laminated).

Moreover, FIG. 10D is an example in which the FPC is contacted with anelectrode composed of the same material (transparent electrode) with thecathode 20 formed on the drawing wiring (wiring that TiN film, Al film,TiN film in turn are laminated).

Moreover, an example whose configuration is partially different from theconfiguration of FIG. 1 is shown in FIG. 8. It should be noted that forsimplification, in FIG. 8, the same reference numeral is used for theportion which is the same with that of FIG. 1. As shown in FIG. 8A,there is an example in which an insulator 24 (also reference to as bank,embankment or barrier) composed of an organic resin covered with theinorganic insulation film 14 is provided between the light emittingregion 10R and the light emitting region 10G, and between the lightemitting region 10G and the light emitting region 10B. When such aninsulator 24 is formed, it is necessarily difficult to make the intervalbetween the light emitting region 10G and the light emitting region 10Bnarrow depending on the patterning precision. In many cases, althoughthe embankment is provided around each pixel, in FIG. 8, a configurationin which the embankment is provided per each pixel row is made.

Moreover, an example in which the configuration is partially differentfrom that of FIG. 8. For simplification, in FIG. 9, the same referencenumeral is used for the same portions as in FIG. 8 and FIG. 1. In FIG.9A, an example in which the region of the laminated section is largerthan that of FIG. 8A is shown, and in FIG. 9B, it does not have thelaminated section, and an example in which the ends of the organiccompound layer is disposed on the insulator 24 is shown. In this way,the location of the ends of the organic compound layer is notparticularly limited if it is disposed on the insulator 24.

In FIG. 1, since the insulator 24 composed of an organic resin is notprovided, comparing to FIG. 8, the interval between the respective lightemitting regions can be narrowed, and a high definition light emittingdevice can be realized.

Embodiment 2

Now, a film containing hydrogen and a protective film will be describedwith reference to FIG. 3 and FIG. 4 below.

A light emitting mechanism of an organic EL depends upon the mechanismin which electron and hole is implanted from the exterior and the lightemitting center is excited by those recombination energy. A structure ofan organic EL is typically a three-layer structure, but here thestructure will be described below using a two layer structure (electrontransport layer, hole transport layer). In FIG. 3A, the energy banddiagram of the EL element in which an organic compound layer having atwo layer structure is sandwiched by a cathode and an anode is shown inFIG. 3A.

FIG. 3A shows an ideal energy band diagram. It should be noted thathere, a light emitting mechanism will be described below by exemplifyingan example in which an ITO is used as an anode, and MgAg is used in thecathode.

When the direct current voltage is applied from the exterior withrespect to the EL element having the above-described two layerstructure, a hole is implanted from an ITO electrode which is an anode,transported to the interface with the organic compound layer, andimplanted into the organic compound layer. On the other hand, anelectron is implanted from the MgAg electrode, transported within theorganic compound layer, reaches nearby the interface, and recombinedwith the hole on the light emitting molecule. As a result, theexcitation state of the light emitting molecule is generated, and theemission resembling to the fluorescence spectrum of the molecule isgenerated.

However, it is expected that the energy band diagram is actually shownin FIG. 3B.

It is considered that in the organic compound layer, numerous drawbacksexist, as shown in FIG. 3B, a level is formed. In the case where anelectron is trapped in this drawback, the light emitting efficiency islowered. In the case where it is trapped, it is deactivated through avariety of pathways, for example, it becomes a thermal quenching or anemission of infrared light. The causing factor of the drawback isconsidered that it is because a dangling bond or unstable bond exists.For example, in the case where a material constituting the organiccompound layer contains carbon atoms and a dangling bond of the carbonatom also makes the EL element continuously emit the light, it isconsidered that the heat due to the emission breaks the unstable bond,then dangling bond may be generated, the drawbacks may be increased bychemical reaction being generated to cause aging degradation.

Then, the present inventor finds that this drawbacks is neutralized withhydrogen (hydrogen radical), and an interband transition is caused moreefficiently to increase brightness, and further the degradation isprevented. As a means of the hydrogen neutralization, in forming ahydrogen containing film covering the EL element, a method of implantinghydrogen into an organic compound layer, or a method of generatingplasma in a hydrogen atmosphere, or a method of addition by ion dopingor ion implantation are enumerated.

Moreover, in the case where an EL element emits and an unstable bond inthe organic compound layer is broken and a dangling bond is generated,if a film containing hydrogen is disposed nearby the organic compoundlayer, then the unpaired bond generated can be terminated with hydrogenand the deterioration can be suppressed. It should be noted thathydrogen is an atom easily diffused even at a comparatively lowtemperature.

Hereinafter, a representative example in which a film containinghydrogen covering the EL element is formed is shown in FIG. 4. FIG. 4Ais a schematic diagram showing an example of a laminated structure of anEL element. In FIG. 4A, the reference numeral 200 denotes an anode (orcathode), the reference numeral 201 denotes an EL layer, the referencenumeral 202 denotes a cathode (or anode), the reference numeral 203denotes a DLC film containing hydrogen, the reference numeral 204denotes a protective film. Moreover, in the case where the emission ismade in the direction of the arrow in the FIG. 4A (in the case where theemission is made pass through the anode 202), it is preferable that forthe reference numeral 202, a conductive material having a translucentproperty or a very thin metal film (alloy such as MgAg, MgIn, AlLi, CaN,or a film formed using an element belonging to 1 Group or 2 Group of theperiodic table and aluminum by co-vapor deposition method), or thelaminated layer thereof is used.

For the protective film 204, an insulation film whose major component issilicon nitride or oxynitride silicon obtained by a sputtering method(DC method or RF method) may be used. If it is formed with atmospherecontaining nitrogen and argon using a silicon target, silicon nitridefilm is obtained. Moreover, a silicon nitride target maybe also used.Moreover, the protective film 204 may be formed using a film formationunit using a remote plasma. Moreover, in the case where the emittedlight is made pass through the protective film, it is preferable thatthe film thickness of the protective film is made as thin as possible.Moreover, the DLC film 203 containing hydrogen contains 70-95 atom % ofcarbon and 5-30 atom % of hydrogen, very hard and excellent ininsulating property. The DLC film containing hydrogen can be formed by aplasma CVD method (representatively, RF plasma CVD method, microwave CVDmethod, electron cyclotron resonance (ECR) CVD method and the like), asputtering method and the like. As a method of forming the DLC film 203containing hydrogen, there is a method in which the DLC film is formedin the temperature range where the foregoing organic compound layer isdurable, for example, in the range from room temperature to 100° C. orless. For the reactant gas used for forming a film in the case whereplasma is generated, hydrogen gas and hydrocarbon based gas (forexample, CH₄, C₂H₂, C₆H₆ and the like) may be used.

The drawback in an organic compound layer can be terminated withhydrogen by diffusing hydrogen from the above-described DLC filmcontaining hydrogen by means of performing the heating treatment in atemperature range where the organic compound layer is durable or bymeans of utilizing the heat generation generated at the time when thelight emitting element emits the light. Once the drawback in the organiccompound layer is terminated with hydrogen, the reliability and thebrightness are enhanced as a light emitting device. Moreover, when theabove-described DLC film containing hydrogen is formed in a film, thedrawback in the organic compound layer may be also terminated withhydrogen which has been made plasmatic. Moreover, the protective layerfor covering and forming the DLC film containing hydrogen blockshydrogen diffusing to the protective layer side and efficientlydiffusing hydrogen into an organic compound layer and plays a role forterminating the drawback in the organic compound layer with hydrogen. Itshould be noted that the above-described DLC film containing hydrogencan be functioned as a protective film of a light emitting element.Furthermore, the above-described DLC film containing hydrogen can befunctioned as a buffer layer, in the case where a silicon nitride filmis formed in a state where it is contacted with a film composed of atransparent conductive film by a sputtering method, it is feared thatimpurities (In, Sn, Zn and the like) contained in the transparentconductive film is contaminated into the silicon nitride film. However,the impurities contamination into the silicon nitride film can beprevented by forming the above-described DLC film containing hydrogenwhich is to be a buffer layer between two films. Due to theabove-described constitution, buffer layer is formed and thuscontamination of impurities (In, Sn and the like) from the transparentconductive film can be prevented, and an excellent protective filmwithout any impurities can be formed.

By thus configuring, the reliability and the brightness can be enhancedas well as the light emitting element is protected. Moreover, FIG. 4B isa schematic diagram showing another example of a laminated structure ofan EL element. In FIG. 4B, the reference numeral 300 denotes an anode(or cathode), the reference numeral 301 denotes an EL layer, thereference numeral 302 denotes a cathode (or anode), the referencenumeral 303 denotes a silicon nitride film containing hydrogen, thereference numeral 304 denotes a protective film. Moreover, in the casewhere the emission is made in the direction of the arrow in the FIG. 4B(in the case where the emission is made pass through the anode 302), itis preferable that for the reference numeral 302, a conductive materialhaving a translucent property or a very thin metal film (MgAg), or thelaminated layer thereof is used.

For the protective film 304, an insulation film whose major component issilicon nitride or silicon oxynitride obtained by a sputtering method(DC method or RF method) may be used. If it is formed under theatmosphere containing nitrogen and argon using a silicon target, siliconnitride film is obtained. Moreover, a silicon nitride target may beused. And, the protective film 304 may be formed using a film formationunit using a remote plasma. Moreover, in the case where the emittedlight is made pass through the protective film, it is preferable thatthe film thickness of the protective film is made as thin as possible.

Moreover, the silicon nitride film 303 containing hydrogen can be formedby a plasma CVD method (representatively, RF plasma CVD method,microwave CVD method, electron cyclotron resonance (ECR) CVD method andthe like), a sputtering method and the like. As a method of forming thesilicon nitride film 303 containing hydrogen, there is a method in whichthe film is formed in the temperature range where the foregoing organiccompound layer is durable, for example, in the range from roomtemperature to 100° C. or less.

As a method of forming the silicon nitride film 303 containing hydrogen,in the case where a plasma CVD method is used, for the reactant gas, gascontaining nitrogen (nitrogen oxide based gas represented byN₂,NH₃NO_(x) or the like) and hydrogen silicide based gas (for example,silane (SiH₄) and disilane and trisilane or the like) may be used.

As a method of forming the silicon nitride film 303 containing hydrogen,in the case where a sputtering method is used, a silicon target is used,and if it is formed under the atmosphere containing hydrogen, nitrogenand argon, a silicon nitride film containing hydrogen can be obtained.Moreover, a silicon nitride target may be used.

The drawback in an organic compound layer can be terminated withhydrogen by diffusing hydrogen from the above-described silicon nitridefilm containing hydrogen by means of performing the heating treatment ina temperature range where the organic compound layer is durable or bymeans of utilizing the heat generation generated at the time when thelight emitting element emits the light. Once the drawback in the organiccompound layer, dangling bond is terminated with hydrogen, thereliability and the brightness are enhanced as a light emitting device.Moreover, when the above-described silicon nitride film containinghydrogen is formed in a film, the drawback in the organic compound layermay be also terminated with hydrogen which has been made plasmatic.Moreover, the protective layer for covering and forming the siliconnitride film containing hydrogen blocks hydrogen diffusing to theprotective layer side and efficiently diffusing hydrogen into an organiccompound layer and plays a role for terminating the drawback in theorganic compound layer with hydrogen. It should be noted that theabove-described silicon nitride film containing hydrogen could befunctioned as a protective film of a light emitting element.

Furthermore, the above-described silicon nitride film containinghydrogen can be functioned as a buffer layer, in the case where thesilicon nitride film is formed in a state where it is contacted with afilm composed of a transparent conductive film by a sputtering method,it is feared that impurities (In, Sn, Zn and the like) contained in thetransparent conductive film is contaminated into the silicon nitridefilm. However, the impurities contamination into the silicon nitridefilm can be prevented by forming the above-described silicon nitridefilm containing hydrogen which is to be a buffer layer between twofilms. The contamination of impurities (In, Sn and the like) from thetransparent conductive film is prevented and an excellent protectivefilm without any impurities can be formed by forming the buffer layeraccording to the above-described configuration.

By thus configuring, the reliability and the brightness can be enhancedas well as the light emitting element is protected. Moreover, FIG. 4C isa schematic diagram showing another example of a laminated structure ofan EL element. In FIG. 4C, the reference numeral 400 denotes an anode(or cathode), the reference numeral 401 denotes an EL layer, thereference numeral 402 denotes a cathode (or anode), the referencenumeral 403 denotes a film containing hydrogen, the reference numeral404 denotes a protective film. Moreover, in the case where the emissionis made in the direction of the arrow in FIG. 4C (in the case where theemission is made pass through the cathode 402), it is preferable thatfor the reference numeral 402, a conductive material having atranslucent property is used.

For the protective film 404, an insulation film whose major component issilicon nitride or silicon oxynitride obtained by a sputtering method(DC method or RF method) may be used. If it is formed under theatmosphere containing nitrogen and argon using a silicon target, siliconnitride film is obtained. Moreover, the protective film 404 may be alsoformed using a film formation unit using remote plasma. Moreover, in thecase where the emitted light is made pass through the protective film,it is preferable that the film thickness of the protective film is madeas thin as possible.

Moreover, the film 403 containing hydrogen can be formed using reactantgas containing hydrogen by a plasma CVD method (representatively, RFplasma CVD method, microwave CVD method, electron cyclotron resonance(ECR) CVD method and the like), a sputtering method and the like.

As for the film 403 containing hydrogen, it is made a DLC film, asilicon nitride film, a silicon oxynitride film, a silicon oxide film ora laminated film thereof.

As a method of forming the film 403 containing hydrogen, there is amethod in which the film is formed in the temperature range where theforegoing organic compound layer is durable, for example, in the rangefrom room temperature to 100° C. or less.

The drawback in an organic compound layer can be terminated withhydrogen by diffusing hydrogen from the above-described silicon nitridefilm containing hydrogen by means of performing the heating treatment ina temperature range where the organic compound layer is durable or bymeans of utilizing the heat generation generating at the time when thelight emitting element emits the light. Once the drawback in the organiccompound layer, representatively, dangling bond is terminated withhydrogen, the reliability and the brightness are enhanced as a lightemitting device. Moreover, when the above-described silicon nitride filmcontaining hydrogen is formed, the drawback in the organic compoundlayer may be also terminated with hydrogen which has been madeplasmatic. Moreover, the protective layer for covering and forming thesilicon nitride film containing hydrogen blocks hydrogen diffusing tothe protective layer side and efficiently diffuses hydrogen into anorganic compound layer and plays a role for terminating the drawback inthe organic compound layer with hydrogen.

Furthermore, the above-described film 403 containing hydrogen can befunctioned as a buffer layer of the protective film 404, and in the casewhere a protective film composed of a silicon nitride film is formed ina state where it is in contact with a film composed of a transparentconductive film by a sputtering method, it is feared that impurities(In, Sn, Zn and the like) contained in the transparent conductive filmare contaminated into the silicon nitride film, but the impuritiescontamination into the silicon nitride film can be prevented by formingthe above-described silicon nitride film containing hydrogen which is tobe a buffer layer between two films. The contamination of impurities(In, Sn and the like) from the transparent conductive film is preventedand an excellent protective film without any impurities can be formed byforming the buffer layer according to the above-described configuration.

By thus configuring, the reliability and the brightness can be enhancedas well as the light emitting element is protected. Moreover, althoughin FIGS. 4A to 4C, an example in which a film containing hydrogen ismade a monolayer is shown, but it may be also a laminated layer of asilicon nitride film containing hydrogen and a DLC film containinghydrogen or a laminated layer of these 3 layers or more.

Moreover, the present embodiment can be applied to not only an activematrix type display device, but also a passive type display device.

Moreover, the present embodiment can be freely combined with Embodiment1.

Embodiment 3

Now, an example whose configuration is partially different from theconfiguration of FIG. 1 is shown in FIG. 5. It should be noted that forsimplification, in FIG. 5, the same reference numeral is used for theportion which is the same with that of FIG. 1. In FIG. 5A, an example inwhich it is made a structure where the impurities from the color filters31 a-31 d are prevented from diffusing by covering the sealing substrate30 with the film 35 whose major component is silicon nitride isexemplified. Moreover, FIG. 5B is a diagram corresponding to FIG. 1C,but in order to enhance the adhesion of the sealing member 33, theconvex portion 24 is formed with the same material with those of thecolor filters 31 a-31 d.

Moreover, the present Embodiment can be freely combined with Embodiment1 or Embodiment 2.

Embodiment 4

Now, an example of a fabrication unit (multi-chamber method) by whichthe laminated structure of FIG. 4A, the laminated structure of FIG. 4Band the laminated structure of FIG. 4C can be separately made is shownin FIG. 6.

In FIG. 6, the reference numerals and characters 100 a-100 k, 100 m-100v denote gates, the reference numerals 101, 119 denote deliverychambers, the reference numerals and characters 102, 104 a, 107, 108,111, and 114 denote carrier chambers, the reference numerals andcharacters 105, 106R, 106B, 106G, 106H, 109, 110, 112 and 113 denotefilm forming chambers, the reference numeral 103 denotes a pretreatmentchamber, the reference numerals and characters 117 a, 117 b denotesealing substrate loading chambers, the reference numeral 115 denotes adispenser chamber, the reference numeral 116 denotes a sealing chamber,the reference numeral 118 denotes a ultraviolet ray irradiation chamber,and the reference numeral 120 denotes a substrate inversion chamber.Hereinafter, the procedure by which the substrate on which the TFT hasbeen previously provided is carried into the fabrication unit shown inFIG. 6, the laminated structure shown in FIG. 4A is formed will bedescribed.

First, the substrate on which the TFT and the anode 200 are provided isset in the delivery chamber 101. Subsequently, it is transported to thecarrier chamber 102 connected to the delivery chamber 101. It ispreferable that after moisture and oxygen are previously vacuum-pumpedso that the moisture and oxygen do not exist within the carrier chamber,an inert gas is introduced and set at the atmospheric pressure.

Moreover, the carrier chamber 102 is connected to a vacuum pumpingtreatment chamber for vacuum-pumping within the carrier chamber. Thevacuum pumping treatment chamber is equipped with a magnetic levitatedtype turbo molecular pump, cryopump, or dry pump. By utilizing this, itis possible to make the ultimate pressure of the carrier chamber be10⁻⁵-10⁻⁶ Pa, and further, reverse diffusion of impurities from the pumpside and exhaust system can be controlled. In order to preventimpurities from being introduced into the interior of the device, for agas to be introduced, an inert gas such as nitrogen and rare gas and thelike are used. For these gases introduced into the device, gases highlypurified by a gas purifier prior to the introduction into the interiorof the device are used. Therefore, it is required that a gas purifier isimplemented so that the gas is introduced into the film forming chamberfollowing the high purification of the gas. Since by utilizing this,oxygen, moisture and the other impurities contained in the gas can bepreviously removed, it can prevent the impurities from being introducedinto the interior of the device.

Moreover, in order to remove the moisture and the other gases containedin the substrate, it is preferable that the annealing for degassing iscarried out under the vacuum, and it is transported to the pretreatmentchamber 103 connected to the carrier chamber 102 and the annealing maybe carried out there. Furthermore, if it is necessary to clean thesurface of the anode, it is transported to the pretreatment chamber 103connected to the carrier chamber 102, then, the cleaning may be carriedout there.

Moreover, if it is necessary, an organic compound layer composed of apolymer molecule may be formed on the whole surface of the anode. In thefabrication unit of FIG. 6, the film forming chamber 105 is provided forforming the organic compound layer composed of the polymer molecule. Inthe case where it is formed by a spin coat method, an ink jet method anda spray method, the surface of the substrate to be film-formed is setunder the atmospheric pressure in the overhead position. The substrateis appropriately rotated inversely in the substrate inversion chamber120 provided between the film forming chamber 105 and the carrierchamber 102. Moreover, it is preferable that after the film formationhas been carried out using the solution, it is transported to thepretreatment chamber 103, where the heating treatment is carried outunder the vacuum and the solvent (water and the like) is vaporized.

Subsequently, without being in contact with the atmosphere, after thesubstrate 104 c has been transported to the carrier chamber 104 from thecarrier chamber 102, it is transported to the film forming chamber 106Rby the carrier mechanism 104 b, and an EL layer which emits the redcolor is appropriately formed on the anode 200. Here, an example inwhich it is formed by vapor deposition is shown. The surface to befilm-formed of the substrate is set in an underhead position in thesubstrate inversion chamber 120 and carried into the film formingchamber 106R. It should be noted that it is preferable that it has beenpreviously vacuum-pumped within the film forming chamber prior to thecarrying-in of the substrate.

For example, the vapor deposition is carried out in the film formingchamber 106R which has been vacuum-pumped to the degree of vacuum of5×10⁻³ Torr (0.665 Pa) or less, and preferably, to the degree of vacuumof 10⁻⁴-10⁻⁶ Pa. Upon the vapor deposition, the organic compound hasbeen previously vaporized by the resistance heating, it flies awaytoward the direction of the substrate by the shutter (not shown) beingopened at the time when the vapor deposition is carried out. An organiccompound vaporized flies away upwardly, it is vapor deposited on thesubstrate through the opening (not shown) provided on the metal mask(not shown). It should be noted that upon the vapor deposition, thetemperature of the substrate (T₁) is made in the range from 50 to 200°C., preferably, in the range from 65 to 150° C. by means of heating thesubstrate.

In order to make it be the full color specification, in the case wherethree kinds of EL layers are formed, after it has been formed in thefilm forming chamber 106R, the film formation may be in turn carried outin the respective film forming chamber 106G and 106B.

When the desired EL layer 201 has been obtained on the anode 200,subsequently, after the substrate is transported to the carrier chamber107 from the carrier chamber 104 without being in contact with theatmosphere, and further, the substrate is transported to the carrierchamber 108 from the carrier chamber 107 without being in contact withthe atmosphere.

Subsequently, after it has been transported to the film forming chamber110 by the carrier mechanism provided within the carrier chamber 108,and a thin metal layer has been formed on the EL layer 201, it istransported to the film forming chamber 109 and the transparentconductive film is formed, the cathode 202 composed of the laminatedlayer of the thin metal layer and the transparent conductive film isappropriately formed. Here, the film forming chamber 110 is made a vapordeposition device equipped with a vapor deposition source of Mg and Ag,and the film forming chamber 109 is made a sputtering device having atleast a target comprising a transparent conductive material.

Subsequently, it is transported to the film forming chamber 112 by thecarrier mechanism provided within the carrier chamber 108, the DLC film203 containing hydrogen in the temperature range where the organiccompound layer is durable is formed. Here, the film forming chamber 112is equipped with a plasma CVD device, and as for the reactant gas usedfor forming a film, a DLC film is formed using hydrogen gas andhydrocarbon based gas (for example, CH₄, C₂H₂, C₆H₆ and the like).Moreover, instead of the DLC film, a silicon nitride film containinghydrogen is formed, and the structure shown in FIG. 4B may be formed. Itshould be noted that the structure is not particularly limited if it isequipped with the means for generating hydrogen radical, and at the timewhen the above-described DLC film containing hydrogen is formed, thedrawback in the organic compound layer is terminated with hydrogen whichhas been made plasmatic.

Subsequently, it is transported to the film forming chamber 113 from thecarrier chamber 108 and the protective film 204 is formed on the DLCfilm 203 containing hydrogen. Here, it is made a sputtering deviceequipped with a target composed of silicon or a target composed ofsilicon nitride. A silicon nitride film can be formed by making the filmforming chamber under the nitrogen atmosphere or by making it under theatmosphere containing nitrogen and argon.

In the above-described steps, the laminated structure shown in FIG. 4A,that is, alight emitting element covered by the protective film and theDLC film containing hydrogen is formed on the substrate.

Subsequently, the substrate on which the light emitting element isformed is transported to the carrier chamber 111 from the carrierchamber 108 without being in contact with the atmosphere and further, itis transported from the carrier chamber 111 into the carrier chamber114.

Subsequently, the substrate on which the light emitting element isformed is transported from the carrier chamber 114 to the sealingchamber 116. It should be noted that it is preferable that the sealingsubstrate on which a sealing member is provided has been previouslyprepared for in the sealing chamber 116.

The sealing substrate is set in the sealing substrate loading chambers117 a, 117 b from the exterior. It should be noted that it is preferablethat the annealing has been previously carried out under the vacuum inorder to remove the impurities such as water or the like, for example,the annealing is carried out within the sealing substrate loadingchambers 117 a, 117 b. Then, in the case where the seal member is formedon the sealing substrate, after it is set at the atmospheric pressure inthe carrier chamber 108, the sealing substrate is transported from thesealing substrate loading chamber to the dispenser chamber 115, a sealmember for pasting it with the substrate on which the light emittingelement is provided is formed, the sealing substrate on which thesealing member has been formed is transported to the sealing chamber116.

Subsequently, in order to degas the substrate on which the lightemitting element has been provided, after the annealing has been carriedout under the vacuum or under the inert atmosphere, the sealingsubstrate on which the sealing member has been provided and thesubstrate on which the light emitting element has been formed are pastedtogether. Moreover, hydrogen or an inert gas is filled in the spacesealed. It should be noted that here, an example in which the sealingmember has been formed on the sealing substrate is shown, but it is notparticularly limited to that, and the sealing member may be formed onthe substrate on which the light emitting element has been formed.

Subsequently, a pair of substrates pasted together is transported fromthe carrier chamber 114 to the ultraviolet ray irradiation chamber 118.Subsequently, the ultraviolet (UV) ray is irradiated in the ultravioletray irradiation chamber 118 and the sealing member is hardened. Itshould be noted that here, using the ultraviolet ray hardened resin as asealing member, but it is not particularly limited to that if it isadhesive member. Subsequently, it is transported from the carrierchamber 114 to the delivery chamber 119 and it is unloaded.

As described above up to here, since the light emitting element is notexposed to the ambient air until the light emitting element iscompletely enclosed in the sealed space by using the fabrication unitshown in FIG. 6, it is possible to prepare a highly reliable lightemitting device. It should be noted that in the carrier chambers 102,114, the vacuum and the atmospheric pressure are alternately changed andthis procedure is repeated, but the vacuum is continuously maintained inthe carrier chambers 104 a and 108. It should be noted that it ispossible to make it a film forming device of in-line method.

Hereinafter, the procedure by which the substrate on which the TFT andanode have been previously provided is carried into the fabrication unitshown in FIG. 6, and the laminated structure shown in FIG. 4C is formedis described.

First, the substrate on which the TFT and the anode 400 are provided isset in the delivery chamber 101. Subsequently, it is transported to thecarrier chamber 102 connected to the delivery chamber 101. It ispreferable that after it has been vacuum-pumped so that the moisture andoxygen do not exist as far as possible within the carrier chamber, aninert gas is introduced and set at the atmospheric pressure. For amaterial for forming the anode 400, a transparent conductive material isused, indium tin compound or zinc oxide and the like can be used.Subsequently, it is carried into the pretreatment chamber 103 connectedto the carrier chamber 102. In this pretreatment chamber, the cleaning,the oxide treatment, heating treatment and the like of the surface ofthe anode may be carried out. As the cleaning of the surface of theanode, the ultraviolet ray irradiation under the vacuum, or oxygenplasma treatment is carried out, thereby cleaning the surface of theanode. Moreover, as an oxide treatment, the ultraviolet ray may beirradiated under the atmosphere containing oxygen while it is heated inthe range from 100 to 120° C., and in the case where the anode is anoxide like an ITO, it is effective. Moreover, as a heating treatment,the heating may be carried out at the heating temperature at 50° C. ormore where the substrate is durable under the vacuum, preferably, theheating may be carried out at 65-150° C., and the impurities such asoxygen, moisture and the like attached to the substrate and impuritiessuch as oxygen, moisture and the like in the film formed on thesubstrate are removed. Since particularly, an EL material is easilysubjected to the deterioration by the impurities such as oxygen, waterand the like, the heating under the vacuum prior to the vapor depositionis effective.

If it is necessary, after the substrate 104 c has transported from thecarrier chamber 102 into the carrier chamber 104 without being incontact with the atmosphere, it is transported to the film formingchamber 105 by the carrier mechanism 104 b, and a hole transport layer,a hole implantation layer or the like which is one layer of the EL layeris appropriately laminated and formed on the anode 400. Here, an examplein which it is formed by vapor deposition is shown. The surface to befilm-formed of the substrate is set in an underhead position in the filmforming chamber 105. It should be noted that it is preferable that ithas been previously vacuum-pumped within the film forming chamber priorto the carrying-in of the substrate.

Subsequently, it is transported to the film forming chamber 106R, and anEL layer which emits red color is appropriately formed on the anode 400.Here, an example in which it is formed by a vapor deposition method isshown. The surface to be film formed of the substrate is set in anunderhead position in the substrate inversion chamber 120 and carriedinto the film forming chamber 106R. It should be noted that it ispreferable that it has been previously vacuum-pumped within the filmforming chamber prior to the carrying-in of the substrate.

For example, the vapor deposition is carried out in the film formingchamber 106R which has been vacuum-pumped to the degree of vacuum of5×10⁻³ Torr (0.665 Pa) or less, and preferably, to the degree of vacuumof 10⁻⁴-10⁻⁶ Pa. Upon the vapor deposition, the organic compound hasbeen previously vaporized by performing the resistance heating, it fliesaway toward the direction of the substrate by the shutter (not shown)being opened at the time when the vapor deposition is carried out. Anorganic compound vaporized flies away upward, it is vapor deposited onthe substrate through the opening (not shown) provided on the metal mask(not shown). It should be noted that upon the vapor deposition, thetemperature of the substrate (T₁) is made in the range from 50 to 200°C., preferably, in the range from 65 to 150° C. by means of heating thesubstrate.

In order to make it be the full color specification, in the case wherethree kinds of EL layers are formed, after it has been formed in thefilm forming chamber 106R, the film formation may be in turn carried outin the respective film forming chamber 106G and 106B.

When the desired EL layer 401 has been obtained on the anode 400,subsequently, after the substrate is transported to the carrier chamber107 from the carrier chamber 104 without being in contact with theatmosphere, and further, the substrate is transported to the carrierchamber 108 from the carrier chamber 107 without being in contact withthe atmosphere.

Moreover, if it is necessary, poly (ethylenedioxythiophene)/poly(stylenesulfonic acid) aqueous solution (PEDOT/PSS) which acts as a holeimplantation layer may be formed on the whole surface prior to theformation of the cathode. In the fabrication unit shown in FIG. 6, thefilm forming chamber 105 for forming the organic compound layer composedof the polymer molecule is provided. In the case where it is formed by aspin coat method, an ink jet method and a spray method, the surface ofthe substrate to be film-formed is set under the atmospheric pressure inthe overhead position. The substrate is appropriately inversed in thesubstrate inversion chamber 120 provided between the film formingchamber 105 and the carrier chamber 102. Moreover, it is preferable thatafter the film formation has been carried out using the aqueoussolution, it is transported to the pretreatment chamber 103, where theheating treatment is carried out under the vacuum and the moisture isvaporized.

Subsequently, it is transported to the film forming chamber 110 by thetransportation mechanism provided within the carrier chamber 108 and thecathode 402 composed of a metal layer is formed on the EL layer 401.Here, the film forming chamber 110 is made a vapor deposition device inwhich a vapor deposition source is equipped with AlLi.

Subsequently, it is transported to the film forming chamber 112 by thecarrier mechanism provided within the carrier chamber 108, and the film403 containing hydrogen is formed in the temperature range where theorganic compound layer is durable. Here, the film forming chamber 112 isequipped with a plasma CVD device, and as for the reactant gas used forforming a film, appropriately using hydrogen gas and hydrocarbon basedgas or a hydrogen silicide based gas, a film composed of a DLC film, asilicon nitride film, silicon oxynitride film, a silicon oxide film or alaminated layer thereof is formed. It should be noted that it is notparticularly limited if it is equipped with means for generatinghydrogen radical, at the time when the above-described film containinghydrogen is formed, the drawback in the organic compound layer isterminated with hydrogen which has been made plasmatic.

Subsequently, without being contact with the atmosphere it istransported to the film forming chamber 113 from the carrier chamber 108and the protective film 404 is formed on the film 403 containinghydrogen. Here, in the film forming chamber 113 it is made a sputteringdevice equipped with a target composed of silicon or a target composedof silicon nitride. A silicon nitride film can be formed by making thefilm forming chamber under the nitrogen atmosphere or by making it underthe atmosphere containing nitrogen and argon.

In the above-described steps, the laminated structure shown in FIG. 4C,that is, a light emitting element covered by the protective film and thefilm containing hydrogen is formed on the substrate. Since the followingsteps are the same with the procedure by which the laminated structureshown in FIG. 4A is formed, here, the description is omitted.

In this way, if the fabrication unit shown in FIG. 6 is used, thelaminated structures shown in FIGS. 4A to 4C can be separatelyfabricated.

Moreover, the fabrication unit which is partially different from thatshown in FIG. 6 is shown in FIG. 7.

In FIG. 6, there is an example in which only one film forming chamberfor forming a film by a spin coat method, an ink jet method and a spraymethod is provided. However, the fabrication unit shown in FIG. 7 is anexample with which three film forming chambers for forming a film by aspin coat method, an ink jet method and a spray method are equipped. Forexample, in order to make it full color specification, in the case wherethree kinds of EL layers are formed by a spin coat method, a ink jetmethod and a spray method, after it has been formed in the film formingchamber 121 a, the film formation may be in turn carried out in therespective film forming chambers 121 b and 121 c. Moreover, it ispreferable that after the film formation has been carried out using aspin coat method, an ink jet method, and a spray method, it istransformed to the pretreatment chamber 103, where the heating treatmentis carried out under the vacuum and the moisture is vaporized. Moreover,the present Embodiment can be freely combined with Embodiment 1,Embodiment 2 or Embodiment 3.

Embodiment 5

Now, an example whose configuration is partially different from theconfiguration of FIG. 1 is shown in FIG. 11. It should be noted that forsimplification, in FIG. 11, the same reference numeral is used for theportion which is the same with that of FIG. 1. In FIG. 11A, there isprovided an example in which an auxiliary electrode 23 is formed on theinorganic insulation film 14. This auxiliary electrode 23 functions asone portion of a cathode (or anode). Since the resistance of the cathode20 composed of a transparent conductive electrode is comparatively high,it is difficult to make it a large screen, but a cathode (or anode) as awhole can be made low resistance. In addition, the transparentconductive film can be made thinner.

Furthermore, it is connected to the wirings and electrodes of the lowerlayers through this auxiliary electrode 23. This auxiliary electrode 23may be formed in a film and patterned prior to the formation of an ELlayer. The auxiliary electrode 23 may be formed with an element selectedfrom W, WSi_(x), Al, Ti, Mo, Cu, Ta, Cr, Ni, Mo, or poly-Si which hasbeen doped with impurities for conferring the conductive type byutilizing a sputtering method, a vapor deposition method or the like oran alloy material whose major component is the foregoing elements or afilm whose major component is a compound material, or a laminated filmthereof. In this way, if the transparent conductive film is formed whilebeing in contact with and superimposed on the auxiliary electrode 23which has been made contacted with the electrode of the lower layer, thedrawing of the cathode can be realized. It should be noted that FIG. 11Cis a sectional view taken on chain line C-C′ shown in FIG. 2. Moreover,in FIG. 11C, it is shown that the electrodes shown in dotted line areelectrically connected each other. Moreover, in the terminal portion,the electrode of the terminal is formed with the same materials withthose of the cathode 20.

Moreover, the present Embodiment can be freely combined with Embodiment1, Embodiment 2, Embodiment 3 or Embodiment 4.

The present invention comprising the above-described configurations willbe further described in detail with reference to examples shown in thefollowing.

EXAMPLES Example 1

In this example, an active matrix type light emitting devicemanufactured on an insulating film will be described. FIG. 12 is a crosssectional view of the active matrix type light emitting device. As anactive element, a thin film transistor (hereafter referred to as a TFT)is used here, a MOS transistor may also be used.

A top gate TFT (specifically a planar TFT) is shown as an example of aTFT, a bottom gate TFT (typically inversely staggered TFT) may also beused.

In this example, a substrate 800 is used, which is made of bariumborosilicate glass or alumino borosilicate glass, a quartz substrate, asilicon substrate, a metal substrate, or stainless substrate forming aninsulating film on the surface may be used. A plastic substrate havingheat resistance enduring a treatment temperature of this example alsomay be used, and further a flexible substrate may be used.

First, a silicon oxynitride film is formed as a lower layer 801 of abase insulating film on a heat-resistant glass substrate (the substrate800) with a thickness of 0.7 mm by plasma CVD at a temperature of 400°C. using SiH₄, NH₃, and N₂O as material gas (the composition ratio ofthe silicon oxynitride film: Si=32%, O=27%, N=24%, H=17%). The siliconoxynitride film has a thickness of 50 nm (preferably 10 to 200 nm). Thesurface of the film is washed with ozone water and then an oxide film onthe surface is removed by diluted fluoric acid (diluted down to 1/100).Next, a silicon oxynitride film is formed as an upper layer 802 of thebase insulating film by plasma CVD at a temperature of 400° C. usingSiH₄ and N₂O as material gas (the composition ratio of the siliconoxynitride film: Si=32%, O=59%, N=7%, H=2%). The silicon oxynitride filmhas a thickness of 100 nm (preferably 50 to 200 nm) and is laid on thelower layer to form a laminate. Without exposing the laminate to theair, a semiconductor film having an amorphous structure (here, anamorphous silicon film) is formed on the laminate by plasma CVD at atemperature of 300° C. using SiH₄ as material gas. The semiconductorfilm (an amorphous silicon film is used here) is 54 nm (preferably 25 to200 nm) in thickness.

A base insulating film in this example has a two-layer structure.However, the base insulating film may be a single layer or more than twolayers of insulating films mainly containing silicon. The material ofthe semiconductor film is not limited but it is preferable to form thesemiconductor film from silicon or a silicon germanium alloy(Si_(1-x)Ge_(x) (X=0.0001 to 0.02)) by a known method (sputtering,LPCVD, plasma CVD, or the like). Plasma CVD apparatus used may be onethat processes wafer by wafer or one that processes in batch. The baseinsulating film and the semiconductor film may be formed in successionin the same chamber to avoid contact with the air.

The surface of the semiconductor film having an amorphous structure iswashed and then a very thin oxide film, about 2 nm in thickness, isformed on the surface using ozone water. Next, the semiconductor film isdoped with a minute amount of impurity element (boron or phosphorus) inorder to control the threshold of the TFTs. Here, the amorphous siliconfilm is doped with boron by ion doping in which diborane (B₂H₆) isexcited by plasma without mass separation. The doping conditions includesetting the acceleration voltage to 15 kV, the flow rate of gas obtainedby diluting diborane to 1% with hydrogen to 30 sccm, and the dosage to2×10¹² atoms/cm².

Next, a nickel acetate solution containing 10 ppm of nickel by weight isapplied by a spinner. Instead of application, nickel element may besprayed onto the entire surface by sputtering.

The semiconductor film is subjected to heat treatment to crystallize itand obtain a semiconductor film having a crystal structure. The heattreatment is achieved in an electric furnace or by irradiation ofintense light. When heat treatment in an electric furnace is employed,the temperature is set to 500 to 650° C. and the treatment lasts for 4to 24 hours. Here, a silicon film having a crystal structure is obtainedby heat treatment for crystallization (at 550° C. for 4 hours) afterheat treatment for dehydrogenation (at 500° C. for an hour). Althoughthe semiconductor film is crystallized here by heat treatment using anelectric furnace, it may be crystallized by a lamp annealing apparatuscapable of achieving crystallization in a short time. After an oxidefilm on the surface of the silicon film having a crystal structure isremoved by diluted fluoric acid or the like, a continuous oscillatingsolid-state laser and the second to fourth harmonic of the fundamentalwave are employed in order to obtain crystals of large grain size whencrystallizing an amorphous semiconductor film. Since the laser lightirradiation is conducted in the air or in an oxygen atmosphere, an oxidefilm is formed on the surface as a result. Typically, the secondharmonic (532 nm) or third harmonic (355 nm) of a Nd:YVO₄ laser(fundamental wave: 1064 nm) is employed. When using a continuous wavelaser, laser light emitted from a 10 W power continuous wave YVO₄ laseris converted into harmonic by a non-linear optical element.Alternatively, the harmonic is obtained by putting a YVO₄ crystal and anon-linear optical element in a resonator. The harmonic is preferablyshaped into oblong or elliptical laser light on an irradiation surfaceby an optical system and then irradiates an irradiation object. Theenergy density required at this point is about 0.01 to 100 MW/cm²(preferably 0.1 to 10 MW/cm²). During the irradiation, the semiconductorfilm is moved relative to the laser light at a rate of 10 to 2000 cm/s.Of course, although a TFT can be formed by using the silicon film havinga crystalline structure before the second harmonics of the continuousoscillating YVO₄ laser is irradiated thereon, it is preferable that thesilicon film having a crystalline structure after the laser light isirradiated thereon is used to form the TFT since the silicon filmirradiated the laser light thereon has an improved crystallinity andelectric characteristics of TFT are improved. For instance, although,when TFT is formed by using the silicon film having a crystallinestructure before the laser light is irradiated thereon, a mobility isalmost 300 cm²/Vs, when TFT is formed by using the silicon film having acrystalline structure after the laser light is irradiated thereon, themobility is extremely improved with about 500 to 600 cm²/Vs. After thecrystallization is conducted using nickel as a metal element thatpromotes crystallization of silicon, the continuous oscillating YVO₄laser is irradiated thereon though, not limited thereof, after thesilicon film is formed having an amorphous structure and the heattreatment is performed for dehydrogenation, and the silicon film havinga crystalline structure may be obtained by the second harmonics of thecontinuous oscillating YVO₄ laser is irradiated.

The pulse oscillation laser may be used for as a substitute for thecontinuous oscillating laser. In the case that the excimer laser of thepulse oscillation is used, it is preferable that the frequency is set to300 Hz, and the laser energy density is set from 100 to 1000 mJ/cm²(typically 200 to 800 mJ/cm²). Here, the laser light may be overlapped50 to 98%.

In addition to the oxide film formed by the laser light irradiation, abarrier layer composed of an oxide film, which treated with ozone waterfor 120 seconds having 1 to 5 nm in total, is formed. The barrier layerhere is formed using ozone water in this example but it may be formed byoxidizing the surface of the semiconductor film having a crystalstructure through ultraviolet irradiation in an oxygen atmosphere, orformed by oxidizing the surface of the semiconductor film having acrystal structure through oxygen plasma treatment, or by using plasmaCVD, sputtering or evaporation to form an about 1 to 10 nm thick oxidefilm. The oxide film formed by the laser light irradiation may beremoved before the barrier layer is formed.

Next, an amorphous silicon film containing argon is formed on thebarrier layer by plasma CVD or sputtering to serve as a gettering site.The thickness of the amorphous silicon film is 50 to 400 nm, here 150nm. The amorphous silicon film is formed in an argon atmosphere with thefilm formation pressure to 0.3 Pa by sputtering using the silicontarget.

Thereafter, heat treatment is conducted in an electric furnace at 650°C. for 3 minutes for gettering to reduce the nickel concentration in thesemiconductor film having a crystal structure. Lamp annealing apparatusmay be used instead of an electric furnace. Using the barrier layer asan etching stopper, the gettering site, namely, the amorphous siliconfilm containing argon elements is selectively removed. Then, the barrierlayer is selectively removed by diluted fluoric acid. Nickel tends tomove toward a region having high oxygen concentration during gettering,and therefore it is desirable to remove the barrier layer that is anoxide film after gettering.

Next, a thin oxide film is formed on the surface of the obtained siliconfilm containing a crystal structure (also referred to as a polysiliconfilm) using ozone water. A resist mask is then formed and the siliconfilm is etched to form island-like semiconductor layers separated fromone another and having desired shapes. After the semiconductor layersare formed, the resist mask is removed.

The oxide film is removed by an etchant containing fluoric acid, and atthe same time, the surface of the silicon film is washed. Then, aninsulating film mainly containing silicon is formed to serve as a gateinsulating film 803. The gate insulating film here is a siliconoxynitride film (composition ratio: Si=32%, O=59%, N=7%, H=2%) formed byplasma CVD to have a thickness of 115 nm.

Next, a laminate of a first conductive film with a thickness of 20 to100 nm and a second conductive film with a thickness of 100 to 400 nm isformed on the gate insulating film. In this example, a tantalum nitridefilm with a thickness of 50 nm is formed on the gate insulating film 803and then a tungsten film with a thickness of 370 nm is laid thereon. Theconductive films are patterned by the procedure shown below to form gateelectrodes and wirings.

The conductive materials of the first conductive film and the secondconductive film are formed by using elements selected from the groupconsisting of Ta, W, Ti, Mo, Al, and Cu, or alloys or compounds mainlycontaining the above elements. The first conductive film and the secondconductive film may be semiconductor films, typically polycrystallinesilicon films, doped with phosphorus or other impurity elements or maybe Ag—Pd—Cu alloy films. The present invention is not limited to atwo-layer structure conductive film. For example, a three-layerstructure consisting of a 50 nm thick tungsten film, 500 nm thickaluminum-silicon alloy (Al—Si) film, and 30 nm thick titanium nitridefilm layered in this order may be employed. When the three-layerstructure is employed, tungsten of the first conductive film may bereplaced by tungsten nitride, the aluminum-silicon alloy (Al—Si) film ofthe second conductive film may be replaced by an aluminum-titanium alloy(Al—Ti) film, and the titanium nitride film of the third conductive filmmay be replaced by a titanium film. Alternatively, a single-layerconductive film may be used.

ICP (inductively coupled plasma) etching is preferred for etching of thefirst conductive film and second conductive film (first etchingtreatment and second etching treatment). By using ICP etching andadjusting etching conditions (the amount of electric power applied to acoiled electrode, the amount of electric power applied to a substrateside electrode, the temperature of the substrate side electrode, and thelike), the films can be etched and tapered as desired. The first etchingtreatment is conducted after a mask made of resist is formed. The firstetching conditions include applying an RF (13.56 MHz) power of 700 W toa coiled electrode at a pressure of 1 Pa, employing CF₄, Cl₂, and O₂ asetching gas, and setting the gas flow rate ratio thereof to 25:25:10(sccm). The substrate side (sample stage) also receives an RF (13.56MHz) power of 150 W to apply a substantially negative self-bias voltage.The area (size) of the substrate side electrode is 12.5 cm×12.5 cm andthe coiled electrode is a disc 25 cm in diameter (here, a quartz disc onwhich the coil is provided). The W film is etched under these firstetching conditions to taper it around the edges. Thereafter, the firstetching conditions are switched to the second etching conditions withoutremoving the mask made from resist. The second etching conditionsinclude using CF₄ and Cl₂ as etching gas, setting the gas flow rateratio thereof to 30:30 (sccm), and giving an RF (13.56 MHz) power of 500W to a coiled electrode at a pressure of 1 Pa to generate plasma foretching for about 30 seconds. The substrate side (sample stage) alsoreceives an RF power of 20 W (13.56 MHz) to apply a substantiallynegative self-bias voltage. Under the second etching conditions where amixture of CF₄ and Cl₂ is used, the W film and the TaN film are etchedto almost the same degree. The first etching conditions and the secondetching conditions constitute the first etching treatment.

Next follows the second etching treatment with the resist mask kept inplace. The third etching conditions include using CF₄ and Cl₂ as etchinggas, setting the gas flow rate ratio thereof to 30:30 (sccm), and givingan RF (13.56 MHz) power of 500 W to a coiled electrode at a pressure of1 Pa to generate plasma for etching for 60 seconds. The substrate side(sample stage) also receives an RF power of 20 W (13.56 MHz) to apply asubstantially negative self-bias voltage. Then, the third etchingconditions are switched to the fourth etching conditions withoutremoving the resist mask. The fourth etching conditions include usingCF₄, Cl₂, and O₂ as etching gas, setting the gas flow rate ratio thereofto 20:20:20 (sccm), and giving an RF (13.56 MHz) power of 500 W to acoiled electrode at a pressure of 1 Pa to generate plasma for etchingfor about 20 seconds. The substrate side (sample stage) also receives anRF power of 20 W (13.56 MHz) to apply a substantially negative self-biasvoltage. The third etching conditions and the fourth etching conditionsconstitute the second etching treatment. At this stage, gate electrodes804 having a first conductive layer 804 a as the lower layer and asecond conductive layer 804 b as the upper layer, and wirings 805 to 807are formed.

Next, the mask made of resist is removed for the first doping treatmentto dope with the entire surface using the gate electrodes 804 to 807 asmasks. The first doping treatment employs ion doping or ionimplantation. Here, ion doping conditions are that the dosage is set to1.5×10¹⁴ atoms/cm², and the acceleration voltage is set from 60 to 100kV. As an impurity element that imparts the n-type conductivity,phosphorus (P) or arsenic (As) is typically used. First impurity regions(n⁻⁻ regions) 822 to 825 are formed in a self-aligning manner.

Masks made from resist are newly formed. At this moment, since the offcurrent value of the switching TFT 903 is lowered, the masks are formedto overlap the channel formation region of a semiconductor layer formingthe switching TFT 903 of the pixel portion 901, and a portion thereof.The masks are formed to protect the channel formation region of thesemiconductor layer forming the p-channel TFT 906 of the driver circuitand the periphery thereof. In addition, the masks are formed to overlapthe channel formation region of the semiconductor layer forming thecurrent control TFT 904 of the pixel portion 901 and the peripherythereof. An impurity region (n⁻ region) that overlaps with a portion ofthe gate electrode is formed by conducting selectively the second dopingtreatment using the masks made of resist. The second doping treatment isemploys ion doping or ion implantation. Here, ion doping is used, theflow rate of gas obtained by diluting phosphine (PH₃) with hydrogen to5% is set to 30 sccm, the dose is set to 1.5×10¹⁴ atoms/cm², and theacceleration voltage is set to 90 kV. In this case the masks made fromresist and the second conductive layer serve as masks against theimpurity element that imparts the n-type conductivity and secondimpurity regions 811 and 812 are formed. The second impurity regions aredoped with the impurity element that imparts the n-type conductivity ina concentration range of 1×10¹⁶ to 1×10¹⁷ atoms/cm³. Here, the sameconcentration range as the second impurity region is referred to as ann⁻ region.

Third doping treatment is conducted without removing the masks made fromresist. The third doping treatment is employs ion doping or ionimplantation. As impurity elements imparts n-type conductivity,phosphorus (P) or arsenic (As) are used typically. Here, ion doping isused, the flow rate of gas obtained by diluting phosphine (PH₃) withhydrogen to 5% is set to 40 sccm, the dosage is set to 2×10¹⁵ atoms/cm²,and the acceleration voltage is set to 80 kV. In this case the masksmade from resist, the first conductive layer and the second conductivelayer serve as masks against the impurity element that imparts then-type conductivity and third impurity regions 813, 814, 826 to 828 areformed. The third impurity regions are doped with the impurity elementthat imparts the n-type conductivity in a concentration range of 1×10²⁰to 1×10²¹ atoms/cm³. Here, the same concentration range as the thirdimpurity region is referred to as an n⁺ region. After removing theresist mask and the new resist mask is formed, the fourth dopingtreatment is conducted. The fourth impurity regions 818, 819, 832, 833and the fifth impurity regions 816, 817, 830, 831 are formed in whichimpurity elements imparts p-type conductivity are added to thesemiconductor layer forming the p-channel TFT by the fourth dopingtreatment.

The concentration of the impurity element that imparts the p-typeconductivity is set from 1×10²⁰ to 1×10²¹ atoms/cm³ to add to the fourthimpurity regions 818, 819, 832, and 833. The fourth impurity regions818, 819, 832, and 833 being regions (n⁻⁻ regions) are already dopedwith phosphorus (P) in the previous step but are doped with the impurityelement that imparts the p-type conductivity in a concentration 1.5 to 3times the phosphorus concentration to obtain the p-type conductivity.Here, a region having the same concentration range as the fourthimpurity regions is also called a p⁺ region.

The fifth impurity regions 816, 817, 830, and 831 are formed in theregion overlaps with the taper portion of the second conductive layer.The impurity elements imparts p-type conductivity is added thereto atthe concentration range from 1×10¹⁸ to 1×10²⁰ atoms/cm³.

Here, the region having the same concentration range as the fifthimpurity regions is referred to as a p⁻ region.

Through the above steps, an impurity region having the n-type or p-typeconductivity is formed in each semiconductor layer. The conductivelayers 804 to 807 become the gate electrodes of TFTs.

An insulating is formed to cover almost the entire surface (not shown).In this example, the silicon oxide film having 50 nm in thickness isformed by plasma CVD method. Of course, the insulating film is notlimited to a silicon oxide film and a single layer or laminate of otherinsulating films containing silicon may be used.

The next step is activation treatment of the impurity elements used todope the respective semiconductor layers. The activation step employsrapid thermal annealing (RTA) using a lamp light source, irradiation ofa laser, heat treatment using a furnace, or a combination of thesemethods.

This example shows an example that the insulating film is formed beforethe above-described activation. However, the insulating film may beformed after the activation.

The first interlayer insulating film 808 made from a silicon nitridefilm is formed. Then, the semiconductor layers are subjected to heattreatment (at 300 to 550° C. for 1 to 12 hours) to hydrogenate thesemiconductor layers. This step is for terminating dangling bonds in thesemiconductor layers using hydrogen contained in the first interlayerinsulating film 808. The semiconductor layers can be hydrogenatedirrespective of the presence of the insulating film made from a siliconoxide film (not shown in a figure). Other hydrogenation methodsemployable include plasma hydrogenation (using hydrogen excited byplasma).

Next, a second interlayer insulating film 809 a is formed on the firstinterlayer insulating film 808 from an organic insulating material or aninorganic insulating material. In this example, an acrylic resin film809 a is formed to have a thickness of 1.6 μm.

Formed next are contact holes reaching the conductive layers that serveas the gate electrodes or gate wires and contact holes reaching therespective impurity regions. In this example, etching treatment isconducted several times in succession. Also, in this example, the firstinterlayer insulating film is used as an etching stopper to etch thesecond interlayer insulating film, and then the first interlayerinsulating film is etched. Thereafter, electrodes 835 to 841,specifically, a source wiring, a power supply line, a lead-outelectrode, a connection electrode, etc. are formed from Al, Ti, Mo, W,etc. Here, the electrodes and wirings are obtained by patterning alaminate of a Ti film (100 nm in thickness), an Al film containingsilicon (350 nm in thickness), and another Ti film (50 nm in thickness).The source electrode, the source wiring, the connection electrode, thelead-out electrode, the power supply line, and the like are thus formedas needed. A lead-out electrode for the contact with a gate wiringcovered with an interlayer insulating film is provided at an end of thegate wiring, and other wirings also have at their ends input/outputterminal portions having a plurality of electrodes for connecting toexternal circuits and external power supplies.

A driver circuit 902 having a CMOS circuit in which an n-channel TFT 905and a p-channel TFT 906 are combined complementarily and a pixel portion901 with a plurality of pixels each having an n-channel TFT 903 or ap-channel TFT 904 are formed in the manner described above.

Next, a third interlayer insulating film 809 b made from an inorganicinsulating material is formed on the second interlayer insulating film809 a. The silicon nitride film 809 b with a thickness of 200 nm isformed by sputtering here. Alternatively, the silicon nitride film 809 bmay contain hydrogen, which is included in a reaction gas.

Next, the third interlayer insulating film 809 b is etched, and then acontact hole is formed so as to reach the connection electrode 841formed in contact with the drain region of the current control TFT 904made from a p-channel TFT. A pixel electrode 834 is formed so as tocontact and overlap with the connection electrode 841. In this example,the pixel electrode 834 is made from a material having a large workfunction, specifically, such as platinum (Pt), chrome (Cr), tungsten (W)and nickel (Ni) with a thickness of 0.1 to 1 μm in order to make thepixel electrode 834 function as an anode of an organic light emittingelement.

An inorganic insulator 842 is formed on each end of the pixel electrode834 so as to cover the each end of the pixel electrode 834. It ispreferable that the inorganic insulator 842 is formed from an insulatingfilm containing silicon by sputtering and then patterned. In addition tothat, the inorganic insulator 842 may contain hydrogen which is includedin the reaction gas. Further, a bank formed from an organic insulatormay be formed for as a substitute for the inorganic insulator 842.

Next, an EL layer 843 and the cathode 844 of the organic light emittingelement are formed on the pixel electrode 834 whose ends are covered bythe inorganic insulator 842. In this example, the EL layer 843 may beformed by ink jet method, evaporation, spin coating method and the like.

An EL layer 843 (a layer for light emission and for moving of carriersto cause light emission) may be formed by freely combining a lightemitting layer, an electric charge transporting layer and an electriccharge injection layer. For example, a low molecular weight organic ELmaterial or a high molecular weight organic EL material is used to forman EL layer. An EL layer may be a thin film formed of a light emittingmaterial that emits light by singlet excitation (fluorescence) (asinglet compound) or a thin film formed of a light emitting materialthat emits light by triplet excitation (phosphorescence) (a tripletcompound). Inorganic materials such as silicon carbide may be used forthe electric charge transporting layers and electric charge injectionlayers. Known organic EL materials and inorganic materials can beemployed.

Moreover, it is considered to be preferable that as a material used fora cathode 844, a metal whose work function is small (representatively,metal elements belonging to 1 Group or 2 Group of the periodic table)and an alloy containing these are used. Since the smaller the workfunction is, the more the light emitting efficiency is enhanced, it ispreferable that among these, as a material used for a cathode, an alloysuch as MgAg, MgIn or AlLi or after the film that has been formed withelements belonging to Group 1 or Group 2 of the periodic table byco-vapor deposition or the like was formed in a thin film, it is made alaminated layer structure in which a transparent conductive film (ITO(indium tin oxide alloy), indium oxide-zinc oxide alloy (In₂O₃—ZnO),zinc oxide (ZnO) and the like) has been formed.

Subsequently, a protective film 846 for covering the cathode 844 isformed. For the protective film 846, an insulating film whose majorcomponent is silicon nitride or silicon oxynitride may be formed by asputtering method, as shown in Embodiment 2, for the purpose that thedrawback in the EL layer is terminated with hydrogen, it is preferablethat a film 845 containing hydrogen is provided on the cathode 844.

As the film 845 containing hydrogen, an insulating film whose majorcomponent is carbon or silicon nitride may be formed by a PCVD method,upon the formation of the film, the drawback in the organic compoundlayer can be terminated with hydrogen which has been made plasmatic.Moreover, the drawback in the organic compound layer can be terminatedwith hydrogen by diffusing hydrogen from the above-described filmcontaining hydrogen by means of performing the heating treatment in thetemperature range where the organic compound layer is durable and bymeans of utilizing the heat generation generated at the time when thelight emitting element emits the light.

Moreover, the protective film 846 and the film 845 containing hydrogenprevent the materials for promoting the deterioration caused by theoxidization of the EL layer, that is, moisture, oxygen and the like frominvading from the exterior. However, the protective film, the filmcontaining hydrogen and the like may not be provided in the input andoutput terminal section necessary to be connected to FPC later.

The stage where the steps so far were terminated is shown in FIG. 12. Itshould be noted that in FIG. 12, a switching TFT 903 and a TFT forsupplying the current to an organic light emitting element (TFT forcontrolling current 904) are shown, however a variety of circuitsconsisting of a plurality of TFTs and the like may be provided beyondthe gate electrode of the relevant TFT. Needless to say, it is notparticularly limited.

Subsequently, it is preferable that the organic light emitting elementis completely interrupted by encapsulating the organic light emittingelement having at least a cathode, an organic compound layer and ananode with a sealing substrate or a sealing can, thereby preventing thematerials such as moisture, oxygen and the like promoting thedeterioration caused by the oxidization of the EL layer from invadingfrom the exterior. It is preferable that the degassing is carried out byperforming the annealing under the vacuum immediately before it isencapsulated with the sealing substrate or the sealing can. Moreover, itis preferable that at the time when the sealing substrate is pasted, itis performed under the atmosphere containing hydrogen and an inert gas(rare gas or nitrogen) and hydrogen is contained in the space sealedwith sealing. The drawback in the organic compound layer can beterminated with hydrogen by diffusing hydrogen from the above-describedspace containing hydrogen by means of utilizing the heat generationgenerated at the time when the light emitting element emits the light.Terminating the drawback in the organic compound layer with hydrogen,the reliability for a light emitting device is enhanced.

Subsequently, a FPC (flexible print circuit) is pasted on the respectiveelectrodes of the input and output terminal section with an anisotropicconductive material. An anisotropic conductive material is composed of aresin and a conductive particle having a diameter of several tens toseveral hundreds μm whose surface has been plated with Au or the like,and the respective electrodes of the input and output terminal sectionand the wirings formed in the FPC are electrically connected each otherwith the conductive particle.

Moreover, color filters corresponding to the respective pixels areprovided on the sealing substrate. The circularly polarized plate is notneeded by providing the color filters. Furthermore, if it is necessary,the other optical film may be provided. Moreover, IC chip or the likemay be mounted.

Moreover, using the fabrication unit shown in FIG. 6 or FIG. 7,according to Embodiment 4, a light emitting device can be prepared withan excellent throughput.

A module type light emitting device to which a FPC has been connected iscompleted by the above-described steps.

Moreover, the present Example can be freely combined with Embodiment 1,Embodiment 2, Embodiment 3, Embodiment 4 or Embodiment 5.

Example 2

Example 1 was an example in which a cathode is made transparentconductive film, the emission is taken out in the direction of the arrowshown in FIG. 4A or FIG. 4B. However, the configuration (FIG. 4C) inwhich the emission is performed in the contrary direction to thedirection shown in FIG. 4A or FIG. 4B may be also available. In thepresent Example, the configuration in which the light is emitted in thedirection contrary to that of Example 1 is shown. However, since theseare approximately the same with each other except that the material ofthe anode and the material of the cathode are different, here thedescription in detail is omitted.

In the present Example, as an anode, a transparent conductive film (ITO(indium tin oxide alloy), indium oxide-zinc oxide alloy (In₂O₃—ZnO),zinc oxide (ZnO) and the like) is used.

Moreover, as a cathode, an alloy film having the film thickness of 80nm-200 nm, representatively, an alloy such as MgAg, MgIn, AlLi and thelike or a film formed with elements belonging to Group 1 or Group 2 ofthe periodic table and aluminum by a co-vapor deposition method is used.

In this way, the emission can be made in the direction of the arrowshown in FIG. 4C.

The present Example is the same with Example 1 except for theabove-described points.

Moreover, using the fabrication unit shown in FIG. 6 or FIG. 7 similarto Example 1, according to Embodiment 4, a light emitting device can beprepared with an excellent throughput.

Moreover, in Example 1, by making an pixel electrode cathode, an organiccompound layer and an anode are laminated, and the emission may be madein the reverse direction to that of Example 1. In this case, it isdesired that a TFT connected to the pixel electrode is made n-channeltype TFT.

Moreover, the present Example can be freely combined with Embodiment 1,Embodiment 2, Embodiment 3, Embodiment 4, Embodiment 5 or Example 1.

Example 3

By implementing the present invention, EL modules (active matrix ELmodule and passive EC module) can be completed. Namely, by implementingthe present invention, all of the electronic equipments into which thevarious modules are built are completed. Following can be given as suchelectronic equipment: video cameras; digital cameras; head mounteddisplays (goggle type displays); car navigation systems; car stereos;personal computers; portable information terminals (mobile computers,mobile phones, electronic books etc.) etc. Examples of these are shownin FIGS. 13A to 13F and 14A to 14C.

FIG. 13A is a personal computer which comprises: a main body 2001; animage input section 2002; a display section 2003; and a keyboard 2004etc.

FIG. 13B is a video camera which comprises: a main body 2101; a displaysection 2102; a voice input section 2103; operation switches 2104; abattery 2105 and an image receiving section 2106 etc.

FIG. 13C is a mobile computer which comprises: a main body 2201; acamera section 2202; an image receiving section 2203; operation switches2204 and a display section 2205 etc.

FIG. 13D is a goggle type display which comprises: a main body 2301; adisplay section 2302; and an arm section 2303 etc.

FIG. 13E is a player using a recording medium in which a program isrecorded (hereinafter referred to as a recording medium) whichcomprises: a main body 2401; a display section 2402; a speaker section2403; a recording medium 2404; and operation switches 2405 etc. Thisapparatus uses DVD (digital versatile disc), CD, etc. for the recordingmedium, and can perform music appreciation, film appreciation, games anduse for Internet.

FIG. 13F is a digital camera which comprises: a main body 2501; adisplay section 2502; a view finder 2503; operation switches 2504; andan image receiving section (not shown in the figure) etc.

FIG. 14A is a mobile phone which comprises: a main body 2901; a voiceoutput section 2902; a voice input section 2903; a display portion 2904;operation switches 2905; an antenna 2906; and an image input section(CCD, image sensor, etc.) 2907 etc.

FIG. 14B is a portable book (electronic book) which comprises: a mainbody 3001; display portions 3002 and 3003; a recording medium 3004;operation switches 3005 and an antenna 3006 etc. FIG. 14C is a displaywhich comprises: a main body 3101; a supporting section 3102; and adisplay portion 3103 etc.

In addition, the display shown in FIG. 14C has small and medium-sized orlarge-sized screen, for example a size of 5 to 20 inches. Further, tomanufacture the display part with such sizes, it is preferable tomass-produce by executing a multiple pattern using a substrate sized 1×1m.

As described above, the applicable range of the present invention isextremely large, and the invention can be applied to the electronicequipment of various areas. Note that the electronic devices of thisexample can be achieved by utilizing any combination of constitutions inEmbodiments 1 to 5 and Examples 1 to 2.

According to the present invention, since the drawback in an organiccompound layer can be terminated with hydrogen, the reliability and thebrightness of a light emitting device are enhanced. Moreover, accordingto the present invention, since a very expensive circularly polarizedfilm can be made unnecessary, the reduction of the manufacturing costcan be realized.

Moreover, according to the present invention, without being dependentupon the film formation method and deposition precision of an organiccompound layer, a high definition, a high aperture ratio and a highreliability can be realized for a flat panel display of full colorsusing the emission colors of red, green and blue.

What is claimed is:
 1. A light emitting device comprising: a substrate;a pixel portion including a light emitting element on the substrate; adrive circuit portion on the substrate; a first terminal portion forpasting a first FPC on the substrate; a second terminal portion forpasting a second FPC on the substrate; and a sealing substrate over thepixel portion, the drive circuit portion, a part of the first terminalportion and a part of the second terminal portion, wherein the sealingsubstrate is pasted with a sealing member, and wherein the sealingmember overlaps with the first terminal portion, the second terminalportion and the drive circuit portion.
 2. The light emitting deviceaccording to claim 1, wherein the first terminal portion and the secondterminal portion are on the same side of the substrate.
 3. The lightemitting device according to claim 1, wherein the first terminal portionincludes a first electrode for pasting the first FPC and the secondterminal portion includes a second electrode for pasting the second FPC.4. The light emitting device according to claim 3, wherein the firstelectrode and the second electrode are formed with the same materialwith that of a cathode of the light emitting element.
 5. A lightemitting device comprising: a substrate; a pixel portion including alight emitting element on the substrate; a drive circuit portion on thesubstrate; a first terminal portion for pasting a first FPC on thesubstrate; a second terminal portion for pasting a second FPC on thesubstrate; and a sealing substrate over the pixel portion, the drivecircuit portion, a part of the first terminal portion and a part of thesecond terminal portion, wherein the sealing substrate is pasted with asealing member, wherein the sealing member overlaps with the firstterminal portion and the second terminal portion, wherein a convexportion is formed on a region of the sealing substrate, and wherein thesealing member is between the substrate and the region where the convexportion is formed.
 6. The light emitting device according to claim 5,wherein the first terminal portion and the second terminal portion areon the same side of the substrate.
 7. The light emitting deviceaccording to claim 5, wherein the first terminal portion includes afirst electrode for pasting the first FPC and the second terminalportion includes a second electrode for pasting the second FPC.
 8. Thelight emitting device according to claim 7, wherein the first electrodeand the second electrode are formed with the same material with that ofa cathode of the light emitting element.
 9. The light emitting deviceaccording to claim 5, wherein the convex portion is formed with the samematerial with that of a color filter in the pixel portion.
 10. A lightemitting device comprising: a substrate; a pixel portion including alight emitting element on the substrate; a drive circuit portion on thesubstrate; a first terminal portion for pasting a first FPC on thesubstrate; a second terminal portion for pasting a second FPC on thesubstrate; an interlayer insulating film over the substrate; and asealing substrate over the pixel portion, the drive circuit portion, apart of the first terminal portion and a part of the second terminalportion, wherein the interlayer insulating film has a concave portion ineach of the first terminal portion and the second terminal portion,wherein an inorganic insulating film is formed over the interlayerinsulating film and in the concave portion, and wherein a sealing memberis between the sealing substrate and the inorganic insulating film and apart of the sealing member is in the concave portion.
 11. The lightemitting device according to claim 10, wherein the first terminalportion and the second terminal portion are on the same side of thesubstrate.
 12. The light emitting device according to claim 10, whereinthe first terminal portion includes a first electrode for pasting thefirst FPC and the second terminal portion includes a second electrodefor pasting the second FPC.
 13. The light emitting device according toclaim 12, wherein the first electrode and the second electrode areformed with the same material with that of a cathode of the lightemitting element.
 14. The light emitting device according to claim 10,wherein the interlayer insulating film includes an organic material. 15.A light emitting device comprising: a substrate; a pixel portionincluding a light emitting element on the substrate; a drive circuitportion on the substrate; a first terminal portion for pasting a firstFPC on the substrate; a second terminal portion for pasting a second FPCon the substrate; an interlayer insulating film over the substrate; anda sealing substrate over the pixel portion, the drive circuit portion, apart of the first terminal portion and a part of the second terminalportion, wherein the interlayer insulating film has a concave portion ineach of the first terminal portion and the second terminal portion,wherein an inorganic insulating film is formed over the interlayerinsulating film and in the concave portion, wherein a convex portion isformed on a region of the sealing substrate, and wherein a sealingmember is between the region where the convex portion is formed and theinorganic insulating film and a part of the sealing member is in theconcave portion.
 16. The light emitting device according to claim 15,wherein the first terminal portion and the second terminal portion areon the same side of the substrate.
 17. The light emitting deviceaccording to claim 15, wherein the first terminal portion includes afirst electrode for pasting the first FPC and the second terminalportion includes a second electrode for pasting the second FPC.
 18. Thelight emitting device according to claim 17, wherein the first electrodeand the second electrode are formed with the same material with that ofa cathode of the light emitting element.
 19. The light emitting deviceaccording to claim 15, wherein the convex portion is formed with thesame material with that of a color filter in the pixel portion.
 20. Thelight emitting device according to claim 15, wherein the interlayerinsulating film includes an organic material.